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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 3.4A 6TSOP
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：3.4A
- Rds On (Max) @ Id, Vgs：60mOhm @ 3.4A, 10V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：235pF @ 15V
- Power - Max：1.15W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-74, SOT-457
- Supplier Device Package：6-TSOP
- Grade：-
- Qualification：-
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Overview
The AO6800 is a dual N-channel MOSFET from Alpha & Omega Semiconductor Inc., utilizing advanced trench technology. It features a drain-source voltage (VDS) of 30V and a continuous drain current (ID) of 3.4A at VGS=10V. The on-state resistance (RDS(ON)) is less than 60mΩ at VGS=10V, less than 70mΩ at VGS=4.5V, and less than 90mΩ at VGS=2.5V. Key dynamic parameters include a total gate charge (Qg) of 10nC at VGS=10V and an input capacitance (Ciss) of 235pF. The device operates within a junction temperature range of -55°C to 150°C and is housed in a TSOP6 package.
Feature Summary
- Advanced trench technology provides low gate charge and excellent RDS(ON).
- Capable of operation with gate voltages as low as 2.5V.
- Dual configuration suitable for load switch or PWM applications.
Applications
- Load switching circuits
- Pulse Width Modulation (PWM) applications
Procurement Notes
Verify the specific datasheet revision and manufacturing date code upon ordering. Confirm that the component meets RoHS compliance requirements if necessary for your assembly process. Ensure the supplier provides traceability documentation consistent with Alpha & Omega Semiconductor Inc. standards. Check for any specific handling precautions related to the TSOP6 surface-mount package during soldering.
Selection Notes
Select this component when a dual N-channel MOSFET with a 30V rating and approximately 3.4A continuous current capability is required. Consider the low RDS(ON) values at various gate voltages for efficiency optimization. Evaluate the thermal characteristics against your board design, specifically the junction-to-ambient resistance, to ensure adequate heat dissipation without exceeding the maximum junction temperature.
Part Context
The AO6800 belongs to the AO680 series of dual N-channel MOSFETs manufactured by Alpha & Omega Semiconductor Inc. This series is designed for general-purpose switching applications requiring low on-resistance and fast switching speeds. The AO6800 specifically offers a 30V breakdown voltage, distinguishing it from higher-voltage variants in the broader product line.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Verify pinout compatibility and electrical specifications before considering alternative manufacturers' components.
FAQ
What is the maximum gate-source voltage for the AO6800?
The maximum gate-source voltage (VGS) is ±12V.
What is the typical turn-on delay time?
The typical turn-on delay time (tD(on)) is 3.5 ns.
What is the body diode reverse recovery charge?
The body diode reverse recovery charge (Qrr) is typically 2.55 nC when IF=3.4A and dI/dt=100A/ms.
