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The AO6800 is a dual N-channel MOSFET featuring advanced trench technology for low on-resistance and gate charge. It supports operation with gate voltages as low as 2.5V, making it suitable for load switches and PWM applications. Key electrical parameters include a drain-source voltage of 30V, continuous drain current of 3.4A at VGS=10V, and maximum junction temperature of 150°C. On-resistance values are less than 60mΩ at VGS=10V, less than 70mΩ at VGS=4.5V, and less than 90mΩ at VGS=2.5V. The device is housed in a TSOP-6 package.
Verify the specific ordering suffix against official Alpha & Omega Semiconductor documentation to confirm exact packaging and tape-and-reel specifications. Confirm RoHS compliance status and ensure the component meets all applicable export control regulations before procurement.
Select this component for designs requiring a compact dual N-channel solution with low drive voltage requirements. Evaluate thermal management needs based on the specified junction-to-ambient resistance and ensure the operating environment stays within the -55°C to 150°C temperature range.
The AO6800 belongs to Alpha & Omega Semiconductor's general-purpose MOSFET portfolio. It is designed for space-constrained applications where dual channel functionality is required. The TSOP-6 package provides a compact footprint suitable for surface-mount assembly on standard FR-4 boards.
No public confirmed substitute part numbers are available in the provided documentation.
The maximum gate-source voltage rating is ±12V.
Yes, the device features low gate charge and fast switching times, including a turn-on rise time of 1.5ns and turn-off fall time of 2.5ns.
The typical total gate charge (Qg) at VGS=10V is 10nC.