AO6800L_003

AO6800L_003

  • Description:MOSFET 2N-CH 30V 3.4A 6TSOP
  • Series:-

SKU:4a1f102e86b8 Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET 2N-CH 30V 3.4A 6TSOP
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Bulk
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:3.4A
  • Rds On (Max) @ Id, Vgs:60mOhm @ 3.4A, 10V
  • Vgs(th) (Max) @ Id:1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:10nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:235pF @ 15V
  • Power - Max:1.15W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-74, SOT-457
  • Supplier Device Package:6-TSOP
  • Grade:-
  • Qualification:-

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AO6800L_003

Overview

The AO6800 is a dual N-channel MOSFET featuring advanced trench technology for low on-resistance and gate charge. It supports operation with gate voltages as low as 2.5V, making it suitable for load switches and PWM applications. Key electrical parameters include a drain-source voltage of 30V, continuous drain current of 3.4A at VGS=10V, and maximum junction temperature of 150°C. On-resistance values are less than 60mΩ at VGS=10V, less than 70mΩ at VGS=4.5V, and less than 90mΩ at VGS=2.5V. The device is housed in a TSOP-6 package.

Feature Summary

  • Dual N-channel configuration utilizing advanced trench technology
  • Low gate charge enabling efficient switching performance
  • Capable of operation with gate voltages as low as 2.5V

Applications

  • Load switch circuits
  • Pulse Width Modulation (PWM) applications

Procurement Notes

Verify the specific ordering suffix against official Alpha & Omega Semiconductor documentation to confirm exact packaging and tape-and-reel specifications. Confirm RoHS compliance status and ensure the component meets all applicable export control regulations before procurement.

Selection Notes

Select this component for designs requiring a compact dual N-channel solution with low drive voltage requirements. Evaluate thermal management needs based on the specified junction-to-ambient resistance and ensure the operating environment stays within the -55°C to 150°C temperature range.

Part Context

The AO6800 belongs to Alpha & Omega Semiconductor's general-purpose MOSFET portfolio. It is designed for space-constrained applications where dual channel functionality is required. The TSOP-6 package provides a compact footprint suitable for surface-mount assembly on standard FR-4 boards.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

FAQ

What is the maximum gate-source voltage rating?

The maximum gate-source voltage rating is ±12V.

Is the AO6800 suitable for high-frequency switching?

Yes, the device features low gate charge and fast switching times, including a turn-on rise time of 1.5ns and turn-off fall time of 2.5ns.

What is the typical total gate charge at VGS=10V?

The typical total gate charge (Qg) at VGS=10V is 10nC.

AO6800L_003AO6800L_003

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