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Product Detailed Parameters
- Description：MOSFET 2P-CH 30V 2.3A 6TSOP
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：2.3A
- Rds On (Max) @ Id, Vgs：115mOhm @ 2.3A, 10V
- Vgs(th) (Max) @ Id：1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：315pF @ 15V
- Power - Max：1.15W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-74, SOT-457
- Supplier Device Package：6-TSOP
- Grade：-
- Qualification：-
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Overview
The AO6801A is a dual P-channel MOSFET manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to achieve low on-resistance and gate charge, making it suitable for load switch and PWM applications. The device features a TSOP-6 package with a drain-source voltage of -30V and a continuous drain current of -2.3A at VGS=-10V. Key electrical parameters include an on-resistance of less than 115mΩ at VGS=-10V, a threshold voltage ranging from -0.6V to -1.4V, and a total gate charge of 7nC at VGS=-10V. The component operates within a junction temperature range of -55°C to 150°C.
Feature Summary
- Dual P-channel configuration utilizing advanced trench technology for optimized performance.
- Low on-resistance characteristics across various gate-source voltages.
- Reduced gate charge facilitating efficient switching in PWM applications.
Applications
- Load switching circuits
- Pulse Width Modulation (PWM) control systems
Procurement Notes
Verify the specific datasheet revision and manufacturer documentation when sourcing this component. Confirm that the TSOP-6 package dimensions and pinout align with your PCB layout requirements. Ensure the selected variant meets the required thermal management specifications for your intended operating environment.
Selection Notes
Select the AO6801A for applications requiring dual P-channel switching with moderate current capabilities. Consider the on-resistance values at your specific gate drive voltage to ensure efficiency. Evaluate the thermal resistance characteristics against your board design to maintain safe junction temperatures during operation.
Part Context
This component belongs to the family of dual P-channel MOSFETs designed for general-purpose switching. It shares architectural similarities with other trench-based devices but offers specific electrical ratings tailored for consumer market applications. The TSOP-6 package provides a compact solution for space-constrained designs.
Replacement Considerations
Check for compatible dual P-channel MOSFETs with similar voltage and current ratings. Verify pin compatibility and thermal performance before substituting. Ensure the alternative device meets the same switching speed and on-resistance requirements for your circuit.
FAQ
What is the maximum drain-source voltage for the AO6801A?
The maximum drain-source voltage (VDS) is -30V.
How does the on-resistance vary with gate-source voltage?
The on-resistance decreases as the magnitude of the gate-source voltage increases, with specified limits at -2.5V, -4.5V, and -10V.
Is the AO6801A qualified for critical life support applications?
No, the product is designed and qualified for the consumer market, and use in life support devices or systems is not authorized.
