AO7800

Overview

The AO7800 is a dual N-channel MOSFET utilizing advanced trench technology, housed in an SC-70-6L (SOT-363) surface-mount package. It features a drain-source voltage of 20V and a continuous drain current of 0.9A at 25°C. The device offers low on-resistance, specified as less than 300mΩ at VGS=4.5V, 350mΩ at VGS=2.5V, and 450mΩ at VGS=1.8V. Key electrical parameters include a gate threshold voltage of 0.9V max, total gate charge of 1.9nC max, and input capacitance of 120pF max. Thermal characteristics define a maximum junction temperature of 150°C and a junction-to-ambient thermal resistance of 190°C/W.

Feature Summary

• Dual N-channel configuration within a compact SOT-363 footprint
• Advanced trench technology for low on-resistance and gate charge
• Capable of operation with gate voltages as low as 1.8V
• Integrated ESD protection

Applications

• Load switching
• Low current inverters
• Low current DC-DC converters

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact packaging and reel specifications. Ensure that the component meets all applicable RoHS and REACH regulatory requirements relevant to the target market before finalizing procurement plans.

Selection Notes

Select this component for applications requiring a small form factor dual N-channel switch. Evaluate the thermal resistance of 190°C/W against the expected ambient conditions and power dissipation limits. Confirm that the drive voltage supports the required on-resistance performance levels.

Part Context

This part belongs to Alpha & Omega Semiconductor's portfolio of trench MOSFETs designed for space-constrained portable electronics. The SC-70-6L package allows for high-density PCB layouts while maintaining sufficient current handling for low-power signal and power switching tasks.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.