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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 4.7A 8TSSOP
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：4.7A (Ta)
- Rds On (Max) @ Id, Vgs：42mOhm @ 4.7A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：17.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1450pF @ 10V
- Power - Max：1.4W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：-
- Supplier Device Package：8-TSSOP
- Grade：-
- Qualification：-
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Overview
The AO8801L is a dual P-channel enhancement mode MOSFET array manufactured by Alpha & Omega Semiconductor Inc. It features a 20V drain-source voltage (Vdss) and supports a continuous drain current of 4.7A at 25°C ambient temperature. The device offers a maximum on-resistance of 42 milliohms at Vgs = 4.5V and Id = 4.7A, with a gate threshold voltage of 1V at 250µA. Key electrical parameters include a maximum gate charge of 17.2nC at 10V and an input capacitance of 1450pF at 10V. It operates within a junction temperature range of -55°C to 150°C and dissipates up to 1.4W of power in an 8-TSSOP surface-mount package.
Feature Summary
- Dual P-channel configuration for common-drain applications
- Logic-level gate drive capability with low threshold voltage
- ESD protected structure for enhanced reliability
Applications
- Uni-directional or bi-directional load switching
- Power management circuits requiring dual P-channel control
- Battery protection and backup power systems
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels due to discontinued status. Confirm lot traceability and RoHS compliance documentation upon receipt. Inspect packaging integrity to prevent moisture damage despite MSL rating 1 classification. Validate part markings against official datasheet specifications to avoid counterfeit substitution risks during procurement.
Selection Notes
Select the AO8801L when dual P-channel isolation is required in compact designs. Ensure gate drive voltages align with the 1V threshold specification for reliable switching. Consider thermal constraints given the 1.4W power dissipation limit in the 8-TSSOP package. Verify that the 20V voltage rating exceeds peak circuit transients for safe operation under all expected load conditions.
Part Context
The AO8801L belongs to the AO880 series of dual MOSFET arrays from Alpha & Omega Semiconductor. This series utilizes advanced trench technology to achieve low on-resistance and fast switching speeds. The component is designed for space-constrained applications requiring integrated dual-channel control solutions in small outline packages.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in verified sources. Evaluate pin-compatible alternatives only if they match the 20V/4.7A P-channel specifications and 8-TSSOP footprint. Verify functional equivalence before implementation.
