AO8804

AO8804

  • Description:MOSFET 2N-CH 20V 8TSSOP
  • Series:-

SKU:2c4aaee53e6b Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET 2N-CH 20V 8TSSOP
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual) Common Drain
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:-
  • Rds On (Max) @ Id, Vgs:13mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:17.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:1810pF @ 10V
  • Power - Max:1.5W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package:8-TSSOP
  • Grade:-
  • Qualification:-

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AO8804

Overview

The AO8804 is a dual N-channel enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to deliver low on-resistance and gate charge, supporting operation with gate voltages as low as 1.8V while maintaining a 12V maximum VGS rating. The device features a common-drain configuration suitable for load switch applications. Key electrical parameters include a drain-source voltage (VDS) of 20V and a continuous drain current (ID) of 8A at VGS = 10V. On-resistance values are specified as less than 13mΩ at 10V, 14mΩ at 4.5V, 15.5mΩ at 3.8V, 19mΩ at 2.5V, and 27mΩ at 1.8V. The component includes ESD protection rated at 2000V HBM.

Feature Summary

  • Advanced trench technology provides excellent on-resistance and low gate charge characteristics.
  • Common-drain configuration facilitates use as a uni-directional or bi-directional load switch.
  • Operates effectively with gate voltages as low as 1.8V while retaining a 12V maximum VGS rating.
  • Integrated ESD protection rated at 2000V HBM.

Applications

  • Uni-directional load switching
  • Bi-directional load switching

Procurement Notes

Verify the specific package type and tape-and-reel specifications against the manufacturer's latest datasheet before ordering. Confirm RoHS compliance status and ensure the supplier provides original manufacturer documentation to guarantee authenticity. Check for any recent product change notices that might affect pinout or thermal performance.

Selection Notes

Select this component when a dual N-channel MOSFET with low gate drive requirements is needed. The 1.8V logic-level compatibility makes it suitable for systems driven by low-voltage controllers. Ensure the application current does not exceed 8A and that the thermal design accommodates the power dissipation associated with the specified on-resistance values.

Part Context

The AO8804 belongs to the family of dual enhancement mode field effect transistors from Alpha & Omega Semiconductor. It shares architectural similarities with parts like the AO8814 and AO8816, which also utilize common-drain configurations. These devices are designed for compact surface-mount applications requiring efficient power switching with minimal control signal overhead.

Replacement Considerations

Potential substitutes include the AO8814 and AO8816, which share similar common-drain dual N-channel architectures. Verify that alternative components meet the 20V VDS requirement and support the necessary gate voltage levels for the specific application context.

AO8804AO8804

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