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The AO8808A is a dual N-channel enhancement mode MOSFET manufactured by Alpha & Omega Semiconductor Inc. It utilizes advanced trench technology to achieve low on-resistance and gate charge, supporting operation with gate voltages as low as 1.8V while maintaining a maximum VGS rating of 12V. The device features a common-drain configuration within an 8-TSSOP surface-mount package. Key electrical specifications include a drain-source breakdown voltage (BVDSS) of 20V, a continuous drain current (ID) of 7.9A at 25°C, and a maximum static drain-source on-resistance (RDS(ON)) of 14mΩ at VGS=10V. Thermal characteristics specify a maximum junction temperature range of -55°C to 150°C.
Verify the component against the official Alpha & Omega Semiconductor datasheet revision 2.1 dated May 2024. Confirm that the received parts match the manufacturer product number AO8808A and are Pb-free compliant with ROHS and Sony 259 specifications. Ensure the package type corresponds to 8-TSSOP and validate thermal ratings against your specific board design requirements.
Select this component when a dual N-channel MOSFET with a 20V rating and low on-resistance is required. The common-drain topology makes it suitable for bidirectional switching. Evaluate the thermal resistance values based on the specific PCB copper area and airflow conditions, as the rated current depends heavily on the mounting environment.
The AO8808A belongs to the AO880 series of dual N-channel MOSFETs from Alpha & Omega Semiconductor. This family focuses on low-voltage, high-current applications utilizing trench FET technology. The AO8808A specifically offers a 20V breakdown voltage and operates in an 8-TSSOP package, distinguishing it from higher voltage variants in the same product line.
Public confirmed substitute part numbers: AO8804, AO8814, AO8816, AO8830, AON3812, AO8832.