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The AO8814 is a dual N-channel MOSFET from Alpha & Omega Semiconductor Inc. housed in an 8-TSSOP package. It features a drain-source voltage (VDS) of 20V and a continuous drain current (ID) of 7.5A at VGS=10V. The on-resistance (RDS(ON)) is less than 16mΩ at VGS=10V, 18mΩ at 4.5V, 20mΩ at 3.6V, 24mΩ at 2.5V, and 34mΩ at 1.8V. Maximum junction temperature is 150°C with power dissipation of 1.5W at TA=25°C.
Verify the specific revision level against the manufacturer's datasheet before procurement. Confirm that the 8-TSSOP package dimensions match the target PCB footprint. Ensure thermal management strategies account for the specified junction-to-ambient resistance values under actual operating conditions.
Select this component when a dual N-channel configuration is required within a compact surface-mount footprint. The low gate threshold voltage supports logic-level driving directly from microcontrollers. Evaluate the 20V breakdown voltage against circuit transients to ensure adequate safety margins during operation.
This device belongs to the Alpha & Omega Semiconductor dual MOSFET family. It utilizes advanced trench technology to achieve high performance in a small outline package. The common-drain design distinguishes it from standard source-grounded configurations, offering flexibility in switching topologies.
Check pinout compatibility and electrical parameters such as VDS, ID, and RDS(ON) when evaluating substitutes. Verify that alternative packages maintain similar thermal characteristics and physical dimensions for direct board replacement.
The maximum gate-source voltage (BVGSO) is rated at ±12V.
RDS(ON) decreases as gate voltage increases, ranging from less than 34mΩ at 1.8V to less than 16mΩ at 10V.
No, the AO8814 has a maximum drain-source voltage of 20V, limiting its use to low-voltage circuits.