AO8814

AO8814

$0.22
  • Description:MOSFET 2N-CH 20V 8TSSOP
  • Series:-

SKU:88bf800644d1 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 20V 8TSSOP
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual) Common Drain
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:-
  • Rds On (Max) @ Id, Vgs:16mOhm @ 7.5A, 10V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:15.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:1390pF @ 10V
  • Power - Max:1.5W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package:8-TSSOP
  • Grade:-
  • Qualification:-

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AO8814

Overview

The AO8814 is a dual N-channel MOSFET from Alpha & Omega Semiconductor Inc. housed in an 8-TSSOP package. It features a drain-source voltage (VDS) of 20V and a continuous drain current (ID) of 7.5A at VGS=10V. The on-resistance (RDS(ON)) is less than 16mΩ at VGS=10V, 18mΩ at 4.5V, 20mΩ at 3.6V, 24mΩ at 2.5V, and 34mΩ at 1.8V. Maximum junction temperature is 150°C with power dissipation of 1.5W at TA=25°C.

Feature Summary

  • Advanced trench technology provides low gate charge and excellent RDS(ON).
  • Operates with gate voltages as low as 1.8V while maintaining a 12V maximum VGS rating.
  • ESD protected with a 2500V HBM rating.
  • Common-drain configuration facilitates uni-directional or bi-directional load switch applications.

Applications

  • Uni-directional load switches
  • Bi-directional load switches

Procurement Notes

Verify the specific revision level against the manufacturer's datasheet before procurement. Confirm that the 8-TSSOP package dimensions match the target PCB footprint. Ensure thermal management strategies account for the specified junction-to-ambient resistance values under actual operating conditions.

Selection Notes

Select this component when a dual N-channel configuration is required within a compact surface-mount footprint. The low gate threshold voltage supports logic-level driving directly from microcontrollers. Evaluate the 20V breakdown voltage against circuit transients to ensure adequate safety margins during operation.

Part Context

This device belongs to the Alpha & Omega Semiconductor dual MOSFET family. It utilizes advanced trench technology to achieve high performance in a small outline package. The common-drain design distinguishes it from standard source-grounded configurations, offering flexibility in switching topologies.

Replacement Considerations

Check pinout compatibility and electrical parameters such as VDS, ID, and RDS(ON) when evaluating substitutes. Verify that alternative packages maintain similar thermal characteristics and physical dimensions for direct board replacement.

FAQ

What is the maximum gate-source voltage rating?

The maximum gate-source voltage (BVGSO) is rated at ±12V.

How does the on-resistance vary with gate voltage?

RDS(ON) decreases as gate voltage increases, ranging from less than 34mΩ at 1.8V to less than 16mΩ at 10V.

Is the device suitable for high-voltage applications?

No, the AO8814 has a maximum drain-source voltage of 20V, limiting its use to low-voltage circuits.

AO8814AO8814
$0.22
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