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The AO8830 is a dual N-channel MOSFET array manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to achieve low on-resistance and gate charge, enabling operation with logic-level gate voltages down to 1.8V. The device features a common-drain configuration suitable for unidirectional or bidirectional load switching applications. Key electrical parameters include a drain-source voltage of 20V and a continuous drain current of 6A. It is housed in an 8-TSSOP surface-mount package and includes ESD protection rated at 2000V HBM.
Verify the specific ordering suffix when purchasing. The standard AO8830 typically ships in cut tape (CT) packaging, while the AO8830L variant denotes a green product option compliant with RoHS standards. Confirm the exact package type and environmental compliance status with the supplier prior to order placement to ensure alignment with project requirements.
Select the AO8830 for applications requiring efficient load switching with low-voltage logic control. Its dual N-channel design supports both unidirectional and bidirectional current flow. Ensure the system operates within the 20V drain-source voltage limit and accounts for the 1.5W maximum power dissipation rating during thermal analysis.
The AO8830 belongs to the MOSFETs - Array family produced by Alpha & Omega Semiconductor. This manufacturer specializes in power management integrated circuits and discrete semiconductors. The AO8830 serves as a component within their portfolio of trench technology-based MOSFETs designed for high-efficiency switching applications.
The AO8810#A is a documented alternative from the same manufacturer featuring similar 20V specifications and 8-TSSOP packaging. Verify pin compatibility and current ratings before substitution.