AO9926B

$0.18

Description：MOSFET 2N-CH 20V 7.6A 8SOIC
Series：-

SKU:fa27b6021fee Category: FET, MOSFET Arrays Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 20V 7.6A 8SOIC
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：7.6A
Rds On (Max) @ Id, Vgs：23mOhm @ 7.6A, 10V
Vgs(th) (Max) @ Id：1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：12.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：630pF @ 15V
Power - Max：2W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

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AO9926B

Overview

The AO9926B is a dual N-channel enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to achieve low on-resistance and gate charge, supporting operation with gate voltages as low as 1.8V while maintaining a maximum VGS rating of 12V. The device is housed in an SOIC-8 package and is suitable for use as a uni-directional or bi-directional load switch. Key electrical parameters include a drain-source voltage (VDS) of 20V, a continuous drain current (ID) of 7.6A at VGS=10V, and a maximum junction temperature of 150°C.

Feature Summary

Advanced trench technology provides excellent RDS(ON) performance and low gate charge characteristics.
Capable of operation with gate voltages as low as 1.8V while retaining a 12V maximum VGS rating.
Dual N-channel configuration allows for compact integration in circuit designs.

Applications

Uni-directional load switching
Bi-directional load switching

Procurement Notes

Verify the specific manufacturer datasheet revision and ordering suffixes to ensure compliance with RoHS and Sony 259 specifications. Confirm that the component is sourced from authorized distributors to guarantee authenticity. Review the terms and conditions of sale provided by Alpha & Omega Semiconductor prior to purchase.

Selection Notes

Select this component when a dual N-channel MOSFET with low gate drive requirements is needed. Ensure the application operates within the 20V drain-source voltage limit and does not exceed the 7.6A continuous current rating at the specified ambient temperature. Consider thermal management strategies given the junction-to-ambient resistance values.

Part Context

The AO9926B belongs to the family of dual N-channel MOSFETs produced by Alpha & Omega Semiconductor. It shares similar packaging and functional concepts with other devices like the AO9926EL and AO9926C, but offers distinct electrical characteristics tailored for low-voltage logic control applications.