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The AOB10B65M1 is a 650V, 10A Alpha IGBT in a TO-263 package. It features a collector-emitter saturation voltage of 1.6V at 25°C and 10A. The device includes an integrated anti-parallel diode with a forward voltage of 1.9V at 25°C. Electrical characteristics include a gate threshold voltage of 4.5V to 5.7V and a short-circuit withstand time of 5µs. Thermal resistance from junction to case is 1°C/W for the IGBT and 3.3°C/W for the diode. Maximum power dissipation is 75W at 25°C case temperature.
Verify the specific ordering suffix against official Alpha & Omega Semiconductor documentation to confirm packaging format. The datasheet indicates availability in Tube (1000 units) and Tape & Reel (800 units). Ensure the component matches the required thermal and electrical specifications for the intended circuit design before procurement.
Select this component for hard switching applications requiring high efficiency and low switching losses. Consider the 650V breakdown voltage and 10A continuous current rating relative to the load requirements. Evaluate the thermal management needs based on the 1°C/W junction-to-case resistance and the maximum power dissipation limits under operating conditions.
The AOB10B65M1 belongs to the AOT(B)10B65M1 series by Alpha & Omega Semiconductor. It shares technical specifications with the AOT10B65M1 variant, which utilizes a TO-220 package. Both devices feature the same AlphaIGBT technology and electrical ratings, differing primarily in the physical package type for mounting purposes.
The AOT10B65M1 is a direct functional equivalent within the same product family, offering identical electrical characteristics in a TO-220 package. Verify pinout compatibility and thermal interface requirements when substituting between the TO-263 and TO-220 packages.
The device has a short-circuit withstand time of 5µs, limited by the maximum junction temperature of 175°C.
Yes, it features a soft and fast recovery anti-parallel diode integrated with the IGBT.
At TJ=175°C, VGE=15V, VCC=400V, IC=10A, and RG=30Ω, the total switching energy is typically 0.43 mJ.