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Product Detailed Parameters
- Description：MOSFET N-CH 100V 8A/130A TO263
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：8A (Ta), 130A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：11.7mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：3.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：100 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4833 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：2.1W (Ta), 500W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263 (D2PAK)
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The AOB1100L is an N-Channel MOSFET from Alpha & Omega Semiconductor, part of the aMOS5 series. It features a 100V drain-source voltage (Vdss) and supports a continuous drain current (Id) of 92A at case temperature. The device utilizes a TO-263 (D2PAK) surface-mount package with a maximum power dissipation of 250W. Key electrical parameters include a gate charge (Qg) of 78nC at 10V, input capacitance (Ciss) of 4010pF at 100V, and a threshold voltage (Vgs(th)) of 3V at 250µA. It operates within a junction temperature range of -55°C to 150°C.
Feature Summary
- N-channel configuration designed for high-current switching applications
- Rugged planar MOSFET technology for enhanced reliability
- Surface-mount construction in a D2PAK package for efficient thermal management
Applications
- Power supply circuits requiring high current handling
- Motor control systems utilizing low-voltage DC inputs
- Industrial automation equipment switching modules
Procurement Notes
Verify the specific datasheet revision and manufacturer lot codes upon receipt. Confirm that the component matches the TO-263 physical dimensions and pinout specifications required by the design. Ensure storage conditions comply with moisture sensitivity levels to prevent package damage during soldering processes.
Selection Notes
Select this component when a robust N-channel solution is needed for 100V applications with significant current demands. The TO-263 package offers a balance between thermal performance and board space efficiency compared to through-hole alternatives. Evaluate the gate charge requirements against the driving circuit capabilities to ensure adequate switching speeds without excessive drive losses.
Part Context
This device belongs to the aMOS5 product line from Alpha & Omega Semiconductor, which focuses on advanced planar MOSFET technologies. The series is engineered to provide improved ruggedness and switching performance for discrete semiconductor applications. It serves as a specialized component within the broader portfolio of power management solutions offered by the manufacturer.
Replacement Considerations
Direct substitutes may include other 100V N-channel MOSFETs in the TO-263 package with comparable current ratings. Verify that alternative parts meet the same thermal dissipation and gate drive specifications to maintain system performance integrity.
