AOB11S60L

AOB11S60L

$1.97
  • Description:MOSFET N-CH 600V 11A TO263
  • Series:aMOS™
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:97460611a344 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N-CH 600V 11A TO263
  • Series:aMOS™
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):600 V
  • Current - Continuous Drain (Id) @ 25°C:11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:399mOhm @ 3.8A, 10V
  • Vgs(th) (Max) @ Id:4.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:11 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:545 pF @ 100 V
  • FET Feature:-
  • Power Dissipation (Max):178W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:TO-263 (D2PAK)
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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AOB11S60L

Overview

The AOB11S60L is a surface-mount N-channel power MOSFET from Alpha & Omega Semiconductor, utilizing the aMOS high-voltage process. It features a drain-source voltage of 600V and a continuous drain current of 11A at 25°C case temperature. The maximum on-resistance is 0.399 ohms at VGS=10V and ID=3.8A. Key dynamic parameters include a typical gate charge of 11nC and an output capacitance energy (Eoss) of 2.7mJ at 400V. The device supports a peak pulsed drain current of 45A and has been tested for 100% UIS capability.

Feature Summary

  • Fabricated using advanced aMOS high-voltage process technology designed for robust switching performance.
  • Guaranteed avalanche capability with 100% UIS testing to ensure reliability in inductive load applications.
  • Optimized low gate charge and output capacitance energy to facilitate rapid adoption in offline power supply designs.

Applications

  • Offline power supply designs
  • Switching applications requiring high ruggedness
  • Inductive load control circuits

Procurement Notes

Verify the specific package type and marking code against the official datasheet before procurement. Confirm that the component meets all environmental compliance requirements relevant to your manufacturing region. Ensure that the ordering suffix matches the required tape and reel or cut tape configuration as specified by the manufacturer's standard packaging options.

Selection Notes

Select this component when designing circuits that require a balance of moderate current handling and high voltage blocking capability in a surface-mount form factor. Consider the thermal resistance characteristics and the need for adequate heatsinking to maintain junction temperatures within safe operating limits during continuous operation.

Part Context

This part belongs to the aMOS family of power transistors from Alpha & Omega Semiconductor. It shares core electrical specifications with the through-hole variants AOT11S60L and AOTF11S60L, differing primarily in the physical package style. The AOB11S60L specifically utilizes the TO-263 (D2PAK) package for surface-mount integration.

Replacement Considerations

Direct functional equivalents include AOT11S60L and AOTF11S60L, which share identical electrical ratings but differ in package type. Verify pinout compatibility and thermal management requirements when substituting between package styles.

FAQ

Is the AOB11S60L rated for repetitive avalanche energy?

Yes, the datasheet specifies a repetitive avalanche energy rating and confirms that the device has undergone 100% UIS testing.

What is the maximum body-diode pulsed current for this MOSFET?

The maximum body-diode pulsed current (ISM) is rated at 45A.

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