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The AOB11S60L is a surface-mount N-channel power MOSFET from Alpha & Omega Semiconductor, utilizing the aMOS high-voltage process. It features a drain-source voltage of 600V and a continuous drain current of 11A at 25°C case temperature. The maximum on-resistance is 0.399 ohms at VGS=10V and ID=3.8A. Key dynamic parameters include a typical gate charge of 11nC and an output capacitance energy (Eoss) of 2.7mJ at 400V. The device supports a peak pulsed drain current of 45A and has been tested for 100% UIS capability.
Verify the specific package type and marking code against the official datasheet before procurement. Confirm that the component meets all environmental compliance requirements relevant to your manufacturing region. Ensure that the ordering suffix matches the required tape and reel or cut tape configuration as specified by the manufacturer's standard packaging options.
Select this component when designing circuits that require a balance of moderate current handling and high voltage blocking capability in a surface-mount form factor. Consider the thermal resistance characteristics and the need for adequate heatsinking to maintain junction temperatures within safe operating limits during continuous operation.
This part belongs to the aMOS family of power transistors from Alpha & Omega Semiconductor. It shares core electrical specifications with the through-hole variants AOT11S60L and AOTF11S60L, differing primarily in the physical package style. The AOB11S60L specifically utilizes the TO-263 (D2PAK) package for surface-mount integration.
Direct functional equivalents include AOT11S60L and AOTF11S60L, which share identical electrical ratings but differ in package type. Verify pinout compatibility and thermal management requirements when substituting between package styles.
Yes, the datasheet specifies a repetitive avalanche energy rating and confirms that the device has undergone 100% UIS testing.
The maximum body-diode pulsed current (ISM) is rated at 45A.