AOB125A60L

$4.50

Description：MOSFET N-CH 600V 28A TO263
Series：aMOS5™
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:0f3e1336e673 Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 600V 28A TO263
Series：aMOS5™
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：125mOhm @ 14A, 10V
Vgs(th) (Max) @ Id：4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：39 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2993 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：357W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263 (D2PAK)
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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AOB125A60L

Overview

The AOB125A60L is a 600V N-Channel Power Transistor utilizing proprietary aMOS5 technology. It features a maximum drain-source breakdown voltage of 700V and a continuous drain current of 28A at case temperature. The device offers a maximum on-resistance of 0.125Ω at VGS=10V and ID=14A, with a total gate charge of 39nC. Packaged in TO-263 (D2PAK), it supports junction temperatures up to 150°C and includes an enhanced body diode for robust reverse recovery performance.

Feature Summary

Proprietary aMOS5 technology ensures low on-resistance and optimized switching parameters for improved EMI performance.
Enhanced body diode design provides robustness and fast reverse recovery characteristics.
Surface-mount TO-263 package facilitates efficient thermal management and PCB integration.

Applications

High-efficiency power conversion circuits
Motor control systems requiring high voltage tolerance
Industrial power supplies

Procurement Notes

Verify the specific ordering suffix matches the required packaging configuration. Confirm RoHS compliance status and environmental declarations against the latest manufacturer documentation. Ensure the component meets all applicable export control regulations and legal requirements before procurement.

Selection Notes

Select this component for applications demanding high voltage isolation and low conduction losses. Evaluate thermal resistance values relative to the intended heatsinking strategy. Consider the gate charge specifications when designing drive circuits to optimize switching speed and minimize driver power consumption.

Part Context

This part belongs to the aMOS5 family of N-channel power transistors from Alpha & Omega Semiconductor. It shares electrical characteristics with through-hole variants like the AOT125A60L but utilizes a surface-mount D2PAK package for different assembly requirements.

Replacement Considerations

Check datasheets for alternative TO-263 packages with similar 600V ratings and comparable RDS(ON) values. Verify pinout compatibility and thermal resistance specifications to ensure direct substitution without circuit redesign.