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Product Detailed Parameters
- Description：MOSFET N-CH 650V 25A TO263
- Series：aMOS™
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：190mOhm @ 12.5A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：26.4 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1278 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：357W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263 (D2PAK)
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The AOB25S65 is a 650V N-channel power MOSFET from Alpha & Omega Semiconductor, utilizing αMOSTM technology. It features a maximum drain-source voltage of 750V and a continuous drain current of 25A at 25°C case temperature. The device has a maximum on-resistance of 0.19Ω at VGS=10V and a typical gate charge of 26.4nC. It includes 100% UIS testing and guarantees avalanche capability with an energy rating of 57mJ. The component is housed in a TO-263 (D2PAK) package.
Feature Summary
- Utilizes advanced αMOSTM high voltage process for robust switching performance
- Guarantees avalanche capability with 100% UIS testing
- Optimized low RDS(on), Qg, and EOSS for offline power supply designs
Applications
- Offline power supply designs
- Switching applications requiring high ruggedness
- General purpose power transistor circuits
Procurement Notes
Verify the specific ordering suffix to confirm the package type matches the design requirements. The 'L' suffix indicates a halogen-free variant. Ensure the selected part number corresponds to the TO-263 package configuration required for the intended PCB layout and thermal management strategy.
Selection Notes
Select this component for applications requiring high voltage blocking and reliable avalanche performance. Consider the thermal resistance characteristics when designing heatsinking solutions. Verify that the gate drive voltage supports the specified RDS(on) parameters for optimal efficiency in the target circuit topology.
Part Context
The AOB25S65 belongs to the AOT25S65 family, which includes variants in different packages such as TO-220 and TO-220F. These parts share identical electrical specifications but differ in physical form factor. The AOB25S65 specifically denotes the surface-mount D2PAK version within this product line.
Replacement Considerations
Direct substitutes include AOT25S65 and AOTF25S65, which share the same electrical ratings. Halogen-free versions are available as AOT25S65L and AOTF25S65L.
