AOB286L

$0.80

Description：MOSFET N-CH 80V 13A/70A TO263
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)

SKU:469aa6238845 Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 80V 13A/70A TO263
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：13A (Ta), 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：5.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：63 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3142 pF @ 40 V
FET Feature：-
Power Dissipation (Max)：2.1W (Ta), 167W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263 (D2PAK)
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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AOB286L

Overview

The AOB286L is an N-Channel MOSFET from Alpha & Omega Semiconductor Inc., utilizing Trench technology optimized for high-frequency switching. It features a Drain-Source Voltage (VDS) of 80V and a continuous drain current (ID) of 70A at VGS=10V. The on-resistance (RDS(ON)) is less than 6.0mΩ at VGS=10V and less than 7.9mΩ at VGS=6V. Key dynamic parameters include a total gate charge (Qg) of 44.5nC typ, input capacitance (Ciss) of 3142pF, and turn-on delay time (tD(on)) of 13.5ns. The device supports a maximum junction temperature of 175°C.

Feature Summary

Optimized Trench MOSFET technology minimizes both conduction and switching power losses through low RDS(ON), Ciss, and Coss values.
Capable of handling high-frequency switching performance suitable for demanding power conversion applications.
Features robust avalanche energy capability with 100% UIS testing verification.

Applications

Boost converters
Synchronous rectifiers
Consumer power supplies
Telecom power supplies
Industrial power supplies
LED backlighting

Procurement Notes

Verify the specific package variant required, as the datasheet covers both TO-220 (AOT286L) and surface mount TO-263 (AOB286L). Confirm thermal management requirements align with the specified junction-to-case or junction-to-ambient resistance values based on your PCB design. Ensure compatibility with the 80V rating and 70A current limits for your circuit topology.

Selection Notes

Select this component when an 80V N-Channel MOSFET is needed for efficient high-frequency operation. The low gate charge and fast switching times make it suitable for applications prioritizing efficiency. Consider the thermal characteristics carefully; use the junction-to-case data if heatsinking is employed, or junction-to-ambient data for board-level cooling solutions on FR-4 substrates.

Part Context

This part belongs to the AOT/AOB series of N-Channel MOSFETs manufactured by Alpha & Omega Semiconductor. The 'AOB' suffix specifically denotes the surface-mount TO-263 package variant, while 'AOT' refers to the through-hole TO-220 version. Both share identical electrical specifications but differ in physical mounting and thermal dissipation characteristics.

Replacement Considerations

Direct replacements must match the 80V VDS, 70A ID, and similar RDS(ON) and Qg specifications. Verify that any substitute supports the same TO-263 footprint if space constraints are critical. Check for equivalent avalanche ratings and body diode reverse recovery characteristics to ensure circuit stability.