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The AOB30B65LN2V is a 650V AlphaIGBT in a TO-263 package, qualified to AEC-Q101. It features a collector-emitter saturation voltage of 1.86V at 25°C and 2.35V maximum at 100°C for a 30A continuous current. The device supports a short-circuit withstand time of 5µs and operates within a junction temperature range of -55°C to 175°C. Thermal resistance from junction-to-case is 0.66°C/W for the IGBT and 3.5°C/W for the diode. Switching parameters include a turn-off energy of 0.35mJ and a reverse recovery charge of 2.28mC at 25°C.
Verify the component against the official Alpha & Omega Semiconductor datasheet to confirm electrical ratings and thermal characteristics. Ensure the TO-263 package matches the target PCB footprint. Confirm that the AEC-Q101 qualification aligns with specific automotive reliability requirements before finalizing procurement.
Select this component for high-voltage applications requiring robust short-circuit protection and low conduction losses. Evaluate the thermal impedance curves to ensure adequate heat dissipation under peak load conditions. Consider the gate charge and switching energy values when designing the driver circuitry for optimal efficiency.
This part belongs to the AlphaIGBT series by Alpha & Omega Semiconductor Inc., designed for power switching applications. The TO-263 (D2PAK) form factor provides efficient thermal management for surface-mount assembly. The product line emphasizes low saturation voltage and high temperature stability for demanding environments.
No public confirmed substitute part numbers are available in the provided documentation.
The device can withstand a short circuit for up to 5 microseconds under specified conditions.
The thermal resistance is 0.66°C/W for the IGBT and 3.5°C/W for the integrated diode.
Yes, the AOB30B65LN2V is qualified according to the AEC-Q101 standard.