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Product Detailed Parameters
- Description：MOSFET N-CH 100V 35.5/120A TO263
- Series：AlphaSGT™
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：35.5A (Ta), 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：3.6mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：78 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：6180 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：8.3W (Ta), 277W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263 (D2PAK)
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The AOB66916L is a 100V N-Channel MOSFET utilizing AlphaSGT™ Trench Power technology, packaged in TO-263 Tape & Reel. It features a maximum drain-source voltage (BVDSS) of 100V and a continuous drain current (ID) of 120A at TC=25°C. The device exhibits a maximum on-resistance (RDS(ON)) of less than 3.6mΩ at VGS=10V and 4.8mΩ at VGS=6V, both measured at ID=20A. Key dynamic parameters include a total gate charge (Qg) of 78nC at VGS=10V, an input capacitance (Ciss) of 6180pF, and a reverse recovery charge (Qrr) of 287nC. Thermal characteristics specify a junction-to-case thermal resistance (RθJC) of 0.45°C/W and a maximum junction temperature range of -55°C to 150°C.
Feature Summary
- Utilizes AlphaSGT™ Trench Power technology for optimized performance
- Features low reverse recovery charge (Qrr) to reduce switching loss
- Optimized voltage spike characteristics suitable for solid-state relay applications
- Subjected to 100% Unclamped Inductive Switching (UIS) testing
Applications
- High frequency switching circuits
- Synchronous rectification systems
- Battery management systems (BMS)
- Motor control applications
Procurement Notes
Verify the specific ordering suffix matches the required package form factor. Confirm that the component meets RoHS and Halogen-Free compliance standards as specified by the manufacturer. Ensure the procurement channel provides valid datasheets and quality certifications. Check for any recent product change notices regarding manufacturing locations or material composition updates before finalizing orders.
Selection Notes
Select this component when a 100V N-Channel MOSFET with high current capability is required. The low RDS(ON) values at both 6V and 10V gate voltages make it suitable for various drive conditions. Consider the TO-263 package for surface mount applications requiring robust thermal dissipation. Evaluate the Qrr specifications if minimizing body diode reverse recovery effects is critical for the circuit design.
Part Context
This part belongs to the AOT66916L/AOB66916L series from Alpha & Omega Semiconductor Inc. It shares electrical characteristics with the through-hole AOT66916L variant but differs in packaging. The device is designed for power switching applications where efficiency and thermal performance are prioritized. It represents a standard offering in the company's discrete semiconductor portfolio for general-purpose power management.
Replacement Considerations
The AOT66916L is the through-hole equivalent of the AOB66916L. Verify pinout compatibility and thermal resistance differences when substituting between package types. No other direct cross-model replacements are documented in the provided source material.
