AOC2401

Description：MOSFET P-CH 30V 3A 4ALPHADFN
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)

SKU:d2337a888237 Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 3A 4ALPHADFN
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
Rds On (Max) @ Id, Vgs：41mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id：1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：40 nC @ 10 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：1327 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：550mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：4-AlphaDFN (1.57x1.57)
Package / Case：4-SMD, No Lead

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AOC2401

Overview

The AOC2401 is a 30V P-Channel MOSFET utilizing advanced trench technology. It provides an on-resistance of less than 41mΩ at VGS=-10V, less than 47mΩ at VGS=-4.5V, and less than 58mΩ at VGS=-2.5V. The device supports operation with gate voltages as low as 2.5V while maintaining a maximum gate-source voltage rating of ±12V. It features typical ESD protection rated at HBM Class 2.

Feature Summary

Advanced trench technology for excellent on-resistance and low gate charge
Capable of operation with gate voltages as low as 2.5V
Retains a 12V maximum gate-source voltage rating

Applications

Consumer market applications
Low-side switching circuits
Power management systems

Procurement Notes

Verify the component datasheet revision and date code to ensure alignment with specific design requirements. Confirm that the intended application falls within the consumer market scope, as critical life support uses are not authorized. Check package markings against the AlphaDFN 1.57x1.57_4 footprint specifications during assembly validation.

Selection Notes

Select this component when a P-Channel MOSFET with a 30V drain-source breakdown voltage is required. Consider the low gate threshold and on-resistance characteristics suitable for low-voltage drive environments. Ensure the thermal dissipation capabilities meet the system's power requirements under steady-state and pulsed conditions.

Part Context

This part belongs to the Alpha & Omega Semiconductor P-Channel MOSFET portfolio. It is designed specifically for the consumer electronics sector. The device utilizes trench technology to achieve high performance in a compact surface-mount package.