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The AOC2422 is an 8V N-Channel MOSFET utilizing advanced trench technology. It features a drain-source voltage of 8V and a continuous drain current of 3.5A at VGS=2.5V. The device offers low on-resistance, with RDS(ON) values below 33mΩ at VGS=2.5V, 38mΩ at VGS=1.8V, 43mΩ at VGS=1.5V, and 58mΩ at VGS=1.2V. It supports gate voltages as low as 1.2V while maintaining a 5V maximum VGS rating. The component includes typical ESD protection rated at HBM Class 2 and is housed in an AlphaDFN 0.97x0.97A_4 package.
Verify the specific datasheet revision and manufacturer documentation to confirm electrical characteristics and mechanical dimensions. Ensure the selected component meets the required thermal and electrical specifications for the intended application environment. Confirm that the product is suitable for consumer market applications as critical components in life support systems are not authorized.
Select this component for applications requiring low-voltage operation with gate drive signals down to 1.2V. The low on-resistance at various gate voltages makes it suitable for efficient power switching in battery-operated devices. Consider the small AlphaDFN package size for space-constrained designs. Verify thermal requirements against the junction-to-ambient thermal resistance provided in the datasheet.
Alpha & Omega Semiconductor manufactures the AOC2422, an 8V N-Channel MOSFET designed for consumer market applications. The device employs advanced trench technology to achieve low on-resistance and low gate charge. It is packaged in an AlphaDFN 0.97x0.97A_4 format, suitable for surface-mount assembly in portable and compact electronic devices.
No publicly confirmed substitute part numbers are available in the source material.
The AOC2422 supports operation with gate voltages as low as 1.2V.
The maximum gate-source voltage rating is 5V.
Yes, the device includes typical ESD protection rated at HBM Class 2.