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Product Detailed Parameters
- Description：MOSFET 2N-CH 4WLCSP
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Common Drain
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：9.1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.3W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：4-UFBGA, WLCSP
- Supplier Device Package：4-WLCSP (1.57x1.57)
- Grade：-
- Qualification：-
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Overview
The AOC2800 is a dual N-channel enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductor. Utilizing advanced trench technology, the device provides low on-resistance and gate charge while supporting operation with gate voltages as low as 2.5V. It features a common-drain configuration suitable for load switch applications. Key electrical parameters include a drain-source voltage of 20V, a continuous drain current of 6A at VGS=4.5V, and an on-resistance below 34mΩ at VGS=4.5V.
Feature Summary
- Common-drain configuration enables unidirectional or bi-directional load switching capabilities
- Advanced trench technology delivers excellent on-resistance and low gate charge
- Operates with gate voltages as low as 2.5V while maintaining a 12V maximum rating
Applications
- Unidirectional load switching
- Bi-directional load switching
Procurement Notes
Verify the specific package type and tape-and-reel quantity against the manufacturer's latest datasheet before ordering. Confirm that the component meets required RoHS compliance standards for your region. Ensure the selected variant matches the intended thermal management requirements for the target application environment.
Selection Notes
Select this component when a dual N-channel solution with low on-resistance is required for 20V systems. The common-drain architecture is ideal for applications needing bidirectional current flow control. Verify that the 2.5V minimum gate drive capability aligns with the system's logic levels to ensure proper turn-on performance under all operating conditions.
Part Context
The AOC2800 belongs to the AOC28xx series of dual N-channel MOSFETs from Alpha & Omega Semiconductor. This family shares similar trench technology characteristics but may vary in specific current ratings or package options. It serves as a complementary option within the company's portfolio of power switches designed for portable and consumer electronics.
Replacement Considerations
The AO8814 and AO8816 are listed as similar common-drain dual N-channel enhancement mode field effect transistors. Verify pin compatibility and exact electrical specifications before substitution.
