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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 4DFN
- Series：AlphaMOS
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Common Drain
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：12.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：700mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：4-XDFN
- Supplier Device Package：4-DFN (1.7x1.7)
- Grade：-
- Qualification：-
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Overview
The AOC2806 is a dual N-channel enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductor Inc. It features a common-drain configuration with a maximum drain-source voltage rating of 20V. The device is designed for high-efficiency switching applications within the AlphaMOS series. It integrates two independent channels in a single package to optimize board space and reduce component count.
Feature Summary
- Dual N-channel architecture providing independent control of two load paths
- Common-drain topology suitable for low-side switching configurations
- Enhancement mode operation for standard logic-level gate drive compatibility
Applications
- Low-side load switching in consumer electronics
- Power distribution networks in computing systems
- General purpose switching in industrial control circuits
Part Context
The AOC2806 belongs to the AlphaMOS family of power MOSFETs from Alpha & Omega Semiconductor Inc. This series focuses on delivering optimized performance for voltage ratings around 20V. It shares architectural similarities with related parts such as the AOC2804 and AOC2804B, which also utilize the common-drain dual N-channel design for compact power management solutions.
FAQ
What is the maximum drain-source voltage for the AOC2806?
The AOC2806 has a maximum drain-source voltage rating of 20V.
Is the AOC2806 a single or dual channel device?
It is a dual N-channel device, containing two independent transistors in one package.
What type of MOSFET configuration does the AOC2806 use?
The AOC2806 utilizes a common-drain configuration.
