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Product Detailed Parameters
- Description：MOSFET 2N-CH 12V 22A 10DFN
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Common Drain
- FET Feature：-
- Drain to Source Voltage (Vdss)：12V
- Current - Continuous Drain (Id) @ 25°C：22A (Ta)
- Rds On (Max) @ Id, Vgs：3.7mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id：1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：32nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：2.3W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：10-SMD, No Lead
- Supplier Device Package：10-AlphaDFN (3.01x1.52)
- Grade：-
- Qualification：-
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Overview
The AOC3870A is a 12V common-drain dual N-channel MOSFET from Alpha & Omega Semiconductor. It utilizes Trench Power MOSFET technology to achieve low on-resistance, with RSS(ON) values below 3.7mΩ at VGS=4.5V and below 5.6mΩ at VGS=2.5V. The device features an integrated ESD protection structure rated for HBM Class 2. Electrical characteristics include a source-source breakdown voltage (BVSSS) of 12V, a gate-source voltage rating of ±8V, and a maximum DC source current of 2.3A. Thermal performance is defined by a junction-to-ambient thermal resistance (θJA) of 130°C/W in the AlphaDFN™ 3.01x1.52A_10 package.
Feature Summary
- Common-drain configuration simplifies circuit design for battery protection applications.
- Integrated ESD protection enhances battery safety and performance reliability.
- Trench Power MOSFET technology enables low on-resistance across various gate voltages.
Applications
- Battery protection switches
- Mobile device battery charging circuits
- Mobile device battery discharging circuits
Procurement Notes
Verify the specific ordering suffix and tape-and-reel quantity against official distributor catalogs before purchase. Confirm that the component meets RoHS and Halogen-Free compliance requirements as stated in the datasheet. Ensure the supplier provides valid traceability documentation for the AlphaDFN package type to guarantee authenticity and quality standards.
Selection Notes
Select this component when a low-voltage, high-current switch with built-in ESD protection is required. The common-drain topology is suitable for designs needing simplified layout. Verify that the operating gate-source voltage aligns with the available drive levels to maintain the specified low on-resistance targets during operation.
Part Context
The AOC3870A belongs to the AOC3870 series of 12V common-drain dual N-channel MOSFETs manufactured by Alpha & Omega Semiconductor. This series includes variants such as the AOC3870C. These devices are designed for mobile electronics, leveraging trench technology to provide efficient power switching within compact AlphaDFN packages.
Replacement Considerations
The AOC3870C is a documented variant within the same product family. Verify pinout compatibility and electrical parameter tolerances before substitution.
FAQ
What is the source-source breakdown voltage?
The source-source breakdown voltage (BVSSS) is 12V.
What is the maximum DC source current?
The maximum DC source current is 2.3A.
What is the package type?
The device is housed in an AlphaDFN™ 3.01x1.52A_10 package.
