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Product Detailed Parameters
- Description：MOSFET 2N-CH 12V 35A 10DFN
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：12V
- Current - Continuous Drain (Id) @ 25°C：35A (Ta)
- Rds On (Max) @ Id, Vgs：2Ohm @ 5A, 4.5V
- Vgs(th) (Max) @ Id：1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：60nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：3.1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：10-SMD, No Lead
- Supplier Device Package：10-AlphaDFN (3.55x1.77)
- Grade：-
- Qualification：-
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Overview
The AOC3878 is a dual N-channel MOSFET in a common-drain configuration, utilizing Trench Power MOSFET technology. It features a 12V source-source breakdown voltage and low on-resistance, ranging from less than 2mΩ at VGS=4.5V to 3.3mΩ at VGS=2.5V with IS=5A. The device supports a continuous DC source current of 35A and a pulse current of 40A. Operating within a junction temperature range of -55°C to 150°C, it includes integrated ESD protection rated for HBM Class 2. Packaged in an AlphaDFN3.55x1.77A_10 format, it is designed for battery protection and mobile device power management.
Feature Summary
- Dual N-channel architecture with common-drain configuration for simplified circuit design
- Integrated electrostatic discharge (ESD) protection to enhance battery safety
- Low on-resistance optimized for operation at gate-source voltages as low as 2.5V
Applications
- Battery protection switches
- Mobile device battery charging circuits
- Mobile device battery discharging circuits
Procurement Notes
Verify the specific ordering suffix 'A' against the manufacturer's official documentation to confirm package type and reel specifications. Confirm RoHS compliance status directly with the supplier or datasheet revision history. Ensure storage conditions adhere to the specified moisture sensitivity level requirements prior to assembly.
Selection Notes
Select this component when a compact dual switch solution with common-drain topology is required. The low Rss(on) at reduced VGS levels makes it suitable for systems driven by lower voltage logic or battery sources. Verify that the thermal dissipation capabilities meet the application's peak power requirements under the expected ambient conditions.
Part Context
This part belongs to Alpha & Omega Semiconductor's portfolio of trench power MOSFETs. It is distinct from standard single-channel devices by offering two isolated channels in one package. The common-drain arrangement differentiates it from common-source configurations typically used for high-side switching.
Replacement Considerations
No public substitute part numbers are documented in the provided datasheet. Evaluate alternatives based on matching 12V rating, dual channel count, common-drain configuration, and compatible AlphaDFN package dimensions.
