AOCA24108E

$0.21

Description：MOSFET 2N-CH 12V 14A 6DFN
Series：-

SKU:2c1feeb3d786 Category: FET, MOSFET Arrays Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 12V 14A 6DFN
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual) Common Drain
FET Feature：-
Drain to Source Voltage (Vdss)：12V
Current - Continuous Drain (Id) @ 25°C：14A (Ta)
Rds On (Max) @ Id, Vgs：7.5mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id：1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：15nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：2.2W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-SMD, No Lead
Supplier Device Package：6-AlphaDFN (1.79x1.18)
Grade：-
Qualification：-

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AOCA24108E

Overview

The AOCA24108E is a dual N-channel MOSFET in a common-drain configuration, designed for battery protection and mobile device power management. It features Trench Power MOSFET technology with low on-resistance across various gate voltages: less than 7.5mΩ at VGS=4.5V, less than 8mΩ at VGS=3.8V, less than 9mΩ at VGS=3.1V, and less than 11mΩ at VGS=2.5V. The device supports a source-source voltage of 12V and a continuous source current of 14A. It includes ESD protection rated HBM Class 1C and is housed in an AlphaDFN 1.79x1.18_6 package.

Feature Summary

Dual N-channel architecture with common drain configuration to simplify circuit design
Integrated ESD protection compliant with HBM Class 1C standards
Trench Power MOSFET technology enabling low on-resistance at logic-level gate voltages

Applications

Battery protection switches
Mobile device battery charging circuits
Mobile device battery discharging circuits

Procurement Notes

Verify the specific ordering suffix and packaging details directly with Alpha & Omega Semiconductor Inc. or authorized distributors before procurement. Confirm that the component meets RoHS and Halogen-Free compliance requirements as stated in the datasheet. Ensure the AlphaDFN 1.79x1.18_6 package type matches your PCB footprint specifications.

Selection Notes

Select this component for applications requiring low on-resistance at reduced gate drive voltages, such as 2.5V or 3.1V systems. The common-drain topology is suitable for high-side switching or load switch configurations where the source follows the gate potential. Verify thermal performance against the junction-to-ambient resistance provided in the datasheet for your specific board layout.

Part Context

This part belongs to the Alpha & Omega Semiconductor lineup of power management solutions. It utilizes Trench Power MOSFET technology, which is characteristic of the manufacturer's focus on low RDS(on) and efficient power handling in small form factors. The common-drain configuration distinguishes it from standard common-source MOSFETs.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Consult the manufacturer for recommended alternatives if this part is discontinued or unavailable.