AOCA32106E

$0.20

Description：MOSFET 2N-CH 12V 25A 10DFN
Series：-

SKU:6443b630ab13 Category: FET, MOSFET Arrays Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 12V 25A 10DFN
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：12V
Current - Continuous Drain (Id) @ 25°C：25A (Ta)
Rds On (Max) @ Id, Vgs：3.4Ohm @ 5A, 4.5V
Vgs(th) (Max) @ Id：1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：23nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：2.8W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：10-SMD, No Lead
Supplier Device Package：10-AlphaDFN (1.84x1.96)
Grade：-
Qualification：-

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AOCA32106E

Overview

The AOCA32106E is a dual N-channel MOSFET in an AlphaDFN 1.84x1.96_10 package, featuring a 12V source-source breakdown voltage and common-drain configuration. It delivers low on-resistance of less than 3.4mΩ at VGS=4.5V and IS=5A, with maximum ratings including ±8V gate-source voltage, 2.8W power dissipation, and -55°C to 150°C junction temperature range. The device integrates ESD protection for battery safety and supports applications like mobile device charging switches.

Feature Summary

Low on-resistance across multiple gate voltages
Integrated ESD protection for enhanced safety
Common-drain configuration simplifies design

Applications

Battery protection switch
Mobile device battery charging
Mobile device battery discharging

Procurement Notes

Verify the specific ordering suffix and tape & reel quantity against official Alpha & Omega Semiconductor documentation before procurement. Confirm RoHS compliance status and ensure the component meets all absolute maximum ratings for your intended operating conditions.

Selection Notes

Select this component when a compact dual N-channel solution with integrated ESD protection is required for 12V battery management systems. Ensure the driving circuit can provide sufficient gate voltage to achieve the specified low on-resistance values under load conditions.

Part Context

This part belongs to Alpha & Omega Semiconductor's portfolio of trench power MOSFETs designed for high-efficiency power management. It utilizes advanced packaging technology to minimize thermal resistance while maintaining robust electrical performance in small form factors suitable for portable electronics.

Replacement Considerations

Check datasheets for alternative dual N-channel MOSFETs with similar 12V ratings and comparable on-resistance characteristics. Verify pinout compatibility and thermal performance metrics to ensure seamless integration without redesigning the PCB layout.