SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The AOCA32112E is a dual N-channel silicon MOSFET array manufactured by Alpha & Omega Semiconductor Inc. It features a maximum drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 4.5A at ambient temperature. The device is housed in a surface-mount 4-AlphaDFN package measuring 0.97x0.97 mm, with a maximum power dissipation of 1.1W at Ta. It complies with RoHS3 standards and has a moisture sensitivity level of 1.
Verify the specific ordering suffix to ensure the correct package variant, as Alpha & Omega Semiconductor utilizes distinct suffixes for different tape-and-reel or cut-tape configurations. Confirm that the requested part matches the 4-AlphaDFN footprint dimensions and pinout requirements for your PCB layout. Cross-reference the manufacturer's latest datasheet to validate compliance with RoHS3 directives and REACH regulations before finalizing procurement specifications.
Select this component when a dual N-channel solution is required within a minimal footprint constraint. The 20V rating suits low-voltage logic interfaces and battery management systems. Ensure the thermal design accommodates the 1.1W dissipation limit in the small DFN package. Compare gate charge and on-resistance parameters against single FET alternatives to evaluate switching speed and conduction loss trade-offs for the target application frequency.
This part belongs to Alpha & Omega Semiconductor’s portfolio of green silicon MOSFETs, emphasizing compact packaging and high integration. The AOCA32112E serves as a dual-array alternative to discrete single FETs, reducing board space. It complements other AOCA series devices offering similar voltage ratings but varying current capacities or package types like SOIC-8.
Public confirmed substitute part numbers are not available in the provided documentation.