AOCA32301

Overview

The AOCA32301 is a common-drain dual N-channel MOSFET from Alpha & Omega Semiconductor, utilizing Trench Power MOSFET technology. It features a low on-resistance of less than 18mΩ at VGS=10V and 24mΩ at VGS=4.5V. The device supports a continuous source current of 9A and a pulse source current of 30A. It operates with a source-source breakdown voltage of 30V and a gate-source voltage range of ±16V. Packaged in the compact AlphaDFN 1.90x1.30mm form factor, it offers a maximum junction temperature of 150°C and power dissipation of 1.9W.

Feature Summary

• Trench Power MOSFET technology for low on-resistance
• Common-drain configuration simplifies circuit design
• ESD protection rated to HBM Class 2

Applications

• Battery protection switches
• Type-C PD load switches
• Typical ESD protection circuits

Procurement Notes

Verify the specific ordering suffix and package variant against the manufacturer's official documentation before procurement. Confirm that the component meets all applicable RoHS and Halogen-Free compliance requirements for your intended manufacturing process. Ensure proper handling procedures are followed due to the small AlphaDFN footprint.

Selection Notes

Select this component when a compact dual N-channel solution with common-drain topology is required. The low on-resistance across various gate voltages makes it suitable for efficient power switching applications. Verify thermal management capabilities, as the small package size limits power dissipation compared to larger packages.

Part Context

This part belongs to Alpha & Omega Semiconductor's AlphaDFN family, designed for space-constrained portable electronics. It complements other low-voltage MOSFETs by offering a dual configuration in a minimal footprint, reducing board area while maintaining high performance for power management tasks.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.