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Product Detailed Parameters
- Description：MOSFET 24V 30A 10DFN
- Series：AlphaDFN™
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：24V
- Current - Continuous Drain (Id) @ 25°C：30A (Ta)
- Rds On (Max) @ Id, Vgs：3.1mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：35nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：3.1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：10-XFDFN
- Supplier Device Package：10-AlphaDFN (3.2x2.1)
- Grade：-
- Qualification：-
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Overview
The AOCA36116C is a dual N-channel MOSFET in a common-drain configuration, featuring an integrated ESD protection structure. It utilizes Trench Power MOSFET technology to achieve low on-resistance across various gate voltages: less than 3.1 mΩ at VGS=4.5V, less than 3.5 mΩ at VGS=3.8V, less than 4 mΩ at VGS=3.1V, and less than 5 mΩ at VGS=2.5V. The device supports a source-source breakdown voltage of 24V and a continuous DC source current of 30A. It operates within a junction temperature range of -55°C to 150°C and is housed in an AlphaDFN 3.2x2.1_10 package.
Feature Summary
- Integrated ESD protection structure designed to enhance battery performance and safety
- Common-drain configuration simplifies circuit design for dual-channel applications
- Trench Power MOSFET technology enables low on-resistance with optimized switching characteristics
Applications
- Battery protection switches
- Mobile device battery charging circuits
- Mobile device battery discharging circuits
Procurement Notes
Verify the specific ordering suffix and package form factor against official Alpha & Omega Semiconductor documentation before procurement. Confirm that the component meets RoHS and Halogen-Free compliance requirements for the intended manufacturing process. Ensure that the supplier provides valid traceability data consistent with the manufacturer's terms and conditions of sale.
Selection Notes
Select this component when a compact dual N-channel solution with built-in ESD protection is required for battery management systems. The common-drain topology is suitable for designs prioritizing simplicity and space efficiency. Evaluate the thermal impedance and safe operating area curves to ensure adequate heat dissipation for the expected load currents and pulse widths in the target application environment.
Part Context
The AOCA36116C belongs to Alpha & Omega Semiconductor’s portfolio of discrete power devices utilizing Trench MOSFET technology. It is packaged in the AlphaDFN 3.2x2.1_10 format, which is designed for high-density circuit layouts. This part is distinct from standard single-channel MOSFETs due to its integrated dual-channel architecture and specific ESD enhancement features tailored for mobile and battery-powered applications.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation. Verify pinout compatibility and electrical parameters if considering alternative dual N-channel MOSFETs from other manufacturers.
