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The AOCR32326 is a dual N-channel MOSFET array manufactured by Alpha & Omega Semiconductor Inc. It features a drain-source voltage rating of 30V and a continuous drain current of 28A at 25°C. The device utilizes Trench Power MOSFET technology to achieve low on-resistance, with a maximum value of 1.7 milliohms at Vgs=4.5V and Id=14A. It is housed in an 8-RigidCSP (6x2.5) surface-mount package, offering a maximum power dissipation of 2.75W. The gate threshold voltage is typically 1.25V at 250µA, and the input capacitance is 1900pF at 10V.
Verify the specific ordering suffix to ensure the correct tape and reel quantity matches your production requirements. Confirm that the component meets RoHS and Halogen-Free compliance standards as specified in the manufacturer datasheet. Check for any recent Product Change Notification (PCN) updates regarding manufacturing site or material changes before finalizing procurement orders.
Select this component when a dual N-channel MOSFET with high current capability and low on-resistance is required in a compact footprint. The 30V rating suits low-voltage power rails. Ensure the thermal design accounts for the 2.75W power dissipation limit in the 8-RigidCSP package under expected operating conditions.
This part belongs to the Alpha & Omega Semiconductor MOSFET arrays family. It is designed for high-efficiency power conversion where size and thermal performance are critical. The common drain configuration allows for easy paralleling or bridge configurations in synchronous rectification applications.
Direct substitutes must match the 30V/28A rating, 8-RigidCSP package, and dual N-channel configuration. Verify pinout compatibility and electrical parameters such as Rds(on) and Qg. Consult official cross-reference lists from Alpha & Omega Semiconductor for approved alternatives.