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Product Detailed Parameters
- Description：MOSFET 2N-CH 12V 30A 10MRIGIDCSP
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel, Common Drain
- FET Feature：-
- Drain to Source Voltage (Vdss)：12V
- Current - Continuous Drain (Id) @ 25°C：30A (Ta)
- Rds On (Max) @ Id, Vgs：3mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id：1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：21nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：3.1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：10-SMD, No Lead
- Supplier Device Package：10-MRigidCSP (2.08x1.45)
- Grade：-
- Qualification：-
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Overview
The AOCR33105E is a dual N-channel enhancement mode MOSFET array manufactured by Alpha & Omega Semiconductor. It utilizes trench-power technology in a common drain configuration, housed in a 10-MRigidCSP package measuring 2.08x1.45 mm. The device supports a drain-source voltage of 12V and a continuous drain current of 30A at ambient temperature. Thermal performance includes a power dissipation rating of 3.1W at Ta. The component operates within a junction temperature range of -55°C to 150°C and complies with RoHS3 standards.
Feature Summary
- Dual N-channel enhancement mode architecture for integrated circuit design
- Common drain configuration simplifies schematic layout and board space utilization
- Trench-power MOSFET technology optimized for low on-resistance and switching efficiency
Applications
- Battery protection switches
- Portable electronic device power management
- Consumer electronics load switching
Procurement Notes
Verify the specific ordering suffix against the manufacturer datasheet to ensure correct packaging and tape-and-reel specifications. Confirm that the 10-MRigidCSP footprint matches the target PCB design constraints. Check for any recent updates to the RoHS3 compliance status or environmental declarations prior to final procurement authorization.
Selection Notes
Select this component when a compact dual-switch solution is required for low-voltage applications. The common drain topology reduces the number of external components needed compared to independent sources. Ensure the thermal design accommodates the 3.1W dissipation limit under maximum load conditions to maintain reliability within the specified operating temperature range.
Part Context
This part belongs to Alpha & Omega Semiconductor’s portfolio of discrete power devices designed for high-volume consumer and industrial markets. The MRigidCSP packaging represents an advancement in power density, allowing for smaller form factors compared to traditional surface-mount packages while maintaining robust thermal performance for modern portable electronics.
Replacement Considerations
No public substitute part numbers are confirmed in available documentation. Verify pinout compatibility and electrical parameters if considering alternative manufacturers for supply chain diversification.
