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The AOD3C50 is a 500V N-Channel MOSFET utilizing Trench Power AlphaMOS-II technology. It features a maximum drain-source voltage of 500V and a continuous drain current of 3A at 25°C. The device offers a maximum on-resistance of 1.4Ω and a typical gate charge of 12nC. It supports a peak pulsed drain current of 12A and includes avalanche energy ratings. The component is housed in a TO-252 package with a junction temperature range of -55°C to 150°C.
Verify the specific ordering suffix and tape & reel quantity requirements against the manufacturer's current documentation. Confirm that the component meets RoHS and halogen-free compliance standards required for your assembly process. Ensure the TO-252 package dimensions align with your PCB footprint design rules before finalizing procurement.
Select this component for designs requiring a 500V blocking voltage with moderate current handling up to 3A. Consider the low gate charge and fast switching characteristics for efficiency in AC/DC converter topologies. Evaluate thermal management needs based on the specified junction-to-ambient resistance values under your expected operating conditions.
This part belongs to the Alpha & Omega Semiconductor lineup of general-purpose N-Channel MOSFETs designed for consumer market applications. It is engineered to provide robust performance in offline power supply designs through advanced trench technology, offering a balance of low conduction losses and high switching speed.
Public confirmed substitute part numbers are not available in the provided source material.
Yes, the datasheet confirms that the device has undergone 100% UIS testing.
The maximum drain-source breakdown voltage (BVDSS) is rated at 500V.