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The AOD3N40 is a 400V, 2.6A N-Channel MOSFET in a TO252 (DPAK) package. It features a maximum drain-source voltage of 400V and a continuous drain current of 2.6A at 25°C case temperature. The device exhibits a typical on-resistance of 2.5Ω at VGS=10V and ID=1A. Thermal characteristics include a junction-to-case resistance of 2.5°C/W and a junction-to-ambient resistance of 55°C/W. The component supports a junction temperature range from -50°C to 150°C and includes guaranteed avalanche capability.
Verify the specific datasheet revision against the manufacturer's official documentation before finalizing design integration. Confirm that the TO252 package dimensions match the target PCB footprint requirements. Ensure thermal management strategies account for the specified junction-to-ambient resistance values under actual operating conditions. Validate that the application does not exceed the absolute maximum ratings defined in the electrical characteristics table.
Select this component for applications requiring moderate voltage blocking capabilities with single-channel control. Consider the thermal resistance parameters when designing heatsinking solutions for continuous operation. Evaluate the gate charge specifications against the driving circuit capabilities to ensure adequate switching speeds. Verify compatibility with the intended gate drive voltage levels for optimal on-state performance.
This part belongs to Alpha & Omega Semiconductor's discrete MOSFET portfolio, specifically designed for general-purpose power switching. The TO252 package provides a balance between current handling capacity and board space efficiency. It serves as a standalone switching element suitable for various power conversion topologies where high voltage isolation is required.
No public confirmed substitute part numbers are available in the provided documentation.