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The AOD3N50 is a 500V N-Channel MOSFET fabricated using an advanced high voltage process. It features a maximum drain-source voltage of 500V and a continuous drain current of 2.8A at 25°C case temperature. The device offers a typical on-resistance of 2.3Ω at VGS=10V and ID=1.5A. It includes guaranteed avalanche capability with repetitive energy ratings up to 60mJ and single pulsed energy up to 120mJ. The component operates within a junction temperature range of -50°C to 150°C.
Verify the specific package variant required, as the datasheet covers both TO252 (DPAK) and TO251 configurations. Confirm that the selected part meets the thermal requirements for the intended application, considering the junction-to-ambient resistance values provided for different mounting conditions. Ensure compliance with export control regulations and legal requirements applicable to the destination region.
Select this component for applications requiring moderate voltage blocking and low current handling with high ruggedness. The guaranteed avalanche rating makes it suitable for inductive load switching where transient energy absorption is critical. Evaluate thermal management strategies based on the specified junction-to-case and junction-to-ambient thermal resistances to ensure operation within the 150°C maximum junction temperature limit.
The AOD3N50 belongs to Alpha & Omega Semiconductor's lineup of high voltage N-Channel MOSFETs. It is often grouped with similar devices like the AOU3N50, which shares identical electrical characteristics but may differ in packaging or manufacturing origin. These components are engineered to provide reliable performance in cost-sensitive offline power conversion topologies.
The AOU3N50 is documented as having identical electrical specifications. Verify pinout compatibility if substituting between TO252 and TO251 packages. No other direct substitutes are confirmed in the provided documentation.
The AOD3N50 supports a repetitive avalanche energy of 60mJ when tested under specified conditions.
No, the gate threshold voltage has a minimum of 3.5V, a typical value of 4.1V, and a maximum of 4.5V at TJ=25°C.