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The AOD409 is a P-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench power MOSFET technology to achieve low on-resistance and gate charge, optimized for fast-switching applications. The device features a drain-source voltage of -60V and a continuous drain current of -26A at VGS=-10V. Static drain-source on-resistance is less than 40mΩ at VGS=-10V and less than 55mΩ at VGS=-4.5V. It operates within a junction temperature range of -55°C to 175°C.
Verify the specific package type and reel quantity required for production, as the AOD409 is available in TO-252 tape and reel formats. Confirm RoHS compliance status if environmental regulations apply to the end product. Ensure the ordering suffix matches the desired packaging configuration before finalizing procurement orders.
Select this component for designs requiring efficient synchronous rectification where low conduction losses are critical. The -60V rating provides adequate headroom for standard 48V systems. Consider the thermal performance and package limitations when designing heat dissipation strategies for high-current scenarios.
The AOD409 belongs to the AOS P-Channel MOSFET family, designed for general-purpose switching and power management. It serves as a complement to N-channel devices in half-bridge and full-bridge topologies. The device is part of a broader portfolio of trench technology MOSFETs offering various voltage and current ratings.
The AOI409 is electrically identical to the AOD409 but may differ in packaging or ordering suffixes. Verify pinout compatibility and thermal characteristics when substituting with other -60V P-Channel MOSFETs from different manufacturers.
Yes, the datasheet confirms that the AOD409 undergoes 100% UIS testing to ensure reliability under inductive load conditions.
The maximum junction temperature for the AOD409 is 175°C, allowing for operation in high-temperature environments.