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Product Detailed Parameters
- Description：MOSFET N-CH 30V 15A/55A TO252
- Series：SDMOS™
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：15A (Ta), 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：5.6mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：42 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2440 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta), 62W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The AOD4146 is a 30V N-Channel MOSFET fabricated using SDMOS trench technology. It provides an outstanding combination of low on-resistance and low gate charge, resulting in high efficiency and controlled switching behavior. The device is designed for surface mount applications with a TO-252 package.
Feature Summary
- Utilizes SDMOS trench technology to achieve excellent RDS(ON) performance alongside low gate charge characteristics.
- Delivers outstanding power efficiency while maintaining controlled switching behavior suitable for demanding power management tasks.
Applications
- Pulse Width Modulation (PWM) circuits
- Load switching applications
- General purpose power switching
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact electrical parameters and packaging options. Ensure the component meets RoHS compliance requirements if applicable to your design specifications before finalizing procurement.
Selection Notes
Select this component when a balance between low conduction losses and efficient switching speed is required. The SDMOS technology makes it suitable for applications where thermal management and power efficiency are critical constraints within a standard surface-mount footprint.
Part Context
This part belongs to the Alpha & Omega Semiconductor lineup of N-Channel Enhancement Mode Field Effect Transistors. It utilizes advanced trench gate technology to optimize the trade-off between on-state resistance and switching speed, positioning it as a versatile solution for modern power electronics designs.
Replacement Considerations
Consult official substitution guides for electrically equivalent alternatives. Verify pinout compatibility and thermal characteristics when considering cross-brand replacements.
