AOD4189

$0.75

Description：MOSFET P-CH 40V 40A TO252
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:c9e6dc67c435 Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 40V 40A TO252
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：22mOhm @ 12A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：41 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1870 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 62.5W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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AOD4189

Overview

The AOD4189 is a P-channel enhancement mode MOSFET manufactured by Alpha & Omega Semiconductor Inc. It utilizes advanced trench technology to achieve low on-resistance and gate charge. The device features a drain-source voltage of 40V and a continuous drain current of 28A at case temperature, with a maximum power dissipation of 31W at ambient temperature and 62.5W at case temperature. Key electrical parameters include an on-resistance of 22mΩ at 12A and 10V, a gate charge of 41nC at 10V, and an input capacitance of 1870pF at 20V. It operates within a junction temperature range of -55°C to 175°C.

Feature Summary

Advanced trench technology design for optimized performance
Low on-resistance combined with low gate charge
Enhanced thermal efficiency for high-power applications

Applications

DC-DC converters
Power switching circuits
Load switches

Procurement Notes

Verify the specific datasheet revision and package marking to ensure compatibility with existing designs. Confirm that the TO-252 (D-Pak) footprint matches the PCB layout requirements. Check for RoHS compliance status if environmental regulations apply to the final assembly. Ensure thermal management solutions are adequate for the specified power dissipation limits under actual operating conditions.

Selection Notes

Select this component when a P-channel MOSFET with 40V rating and low RDS(on) is required in a surface-mount TO-252 package. Consider the 28A continuous current capability and thermal resistance characteristics for heat sink or board-level cooling strategies. Evaluate gate drive requirements against the 41nC gate charge specification to ensure efficient switching speeds.

Part Context

This part belongs to the Alpha & Omega Semiconductor P-channel MOSFET family, designed for general-purpose power switching applications. The TO-252 package provides a balance between current handling capacity and compact surface-mount integration. It serves as a discrete solution for replacing older generation planar MOSFETs in power supply designs requiring improved efficiency.

Replacement Considerations

Direct substitutes must match the 40V P-channel specification, TO-252 package, and comparable RDS(on) and current ratings. Verify pinout compatibility and thermal characteristics before substitution.