AOD442

$0.98

Description：MOSFET N-CH 60V 7A/37A TO252
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:1d8171387938 Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 7A/37A TO252
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：7A (Ta), 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：20mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：68 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2300 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.1W (Ta), 60W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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AOD442

Overview

The AOD442 is a 60V N-Channel MOSFET utilizing advanced trench technology to deliver low on-resistance and gate charge. It features a drain-source breakdown voltage of 60V, a continuous drain current of 37A at VGS=10V, and an RDS(ON) of less than 20mΩ at VGS=10V. The device supports a maximum junction temperature range from -55°C to 175°C and is housed in a TO-252 package.

Feature Summary

Advanced trench technology for optimized performance
Low gate charge characteristics
Excellent on-resistance specifications

Applications

Load switch applications
PWM (Pulse Width Modulation) applications

Procurement Notes

Verify the specific datasheet revision and electrical parameters against the manufacturer's official documentation before integration. Confirm that the component meets all required thermal and electrical ratings for the intended operating environment. Ensure compliance with export control regulations and applicable legal requirements during acquisition.

Selection Notes

Select this component for designs requiring efficient switching with low conduction losses. Evaluate thermal management strategies based on the specified junction-to-case and junction-to-ambient thermal resistances. Consider the gate charge requirements for driver compatibility in high-frequency PWM circuits.

Part Context

This part belongs to Alpha & Omega Semiconductor's N-Channel MOSFET lineup. It is designed for general-purpose power switching applications where efficiency and thermal performance are critical. The device is manufactured using silicon planar trench technology.