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Product Detailed Parameters
- Description：MOSFET N-CH 200V 3.8A TO252
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：200 V
- Current - Continuous Drain (Id) @ 25°C：3.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：700mOhm @ 3.8A, 15V
- Vgs(th) (Max) @ Id：6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：3.82 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：215 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：2.1W (Ta), 25W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The AOD450 is a 200V N-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to achieve low gate charge and excellent on-resistance. The device is housed in a TO-252 (DPAK) surface-mount package. Key electrical parameters include a drain-source breakdown voltage of 200V, a continuous drain current of 3.8A at VGS=10V, and a maximum static drain-source on-resistance of 0.70Ω at VGS=10V. The component supports a junction temperature range from -55°C to 175°C.
Feature Summary
- Advanced trench technology design for optimized performance
- Low gate charge characteristics
- Excellent static drain-source on-resistance
- 100% unclamped inductive switching tested
Applications
- Inverter circuits
- Load switching applications
- General purpose switching
Procurement Notes
Verify the specific datasheet revision and manufacturer documentation before integration. Confirm that the TO-252 package dimensions match the target PCB footprint. Ensure thermal management strategies align with the specified junction-to-case and junction-to-ambient thermal resistance values provided in the official specifications.
Selection Notes
Select this component for applications requiring a 200V rating with moderate current handling capabilities up to 3.8A. Consider the low gate charge for driving efficiency and the robust avalanche energy capability for inductive loads. Evaluate the thermal requirements against the specified power dissipation limits under steady-state and pulsed conditions.
Part Context
This part belongs to the Alpha & Omega Semiconductor N-Channel MOSFET family designed for consumer market applications. It is an enhancement mode field effect transistor utilizing silicon technology. The device is specifically engineered to provide reliable switching performance in compact surface-mount packages suitable for space-constrained electronic designs.
Replacement Considerations
When evaluating substitutes, ensure the replacement maintains a minimum 200V drain-source voltage rating and comparable on-resistance at VGS=10V. Verify that the alternative device offers similar gate charge characteristics and fits within the same TO-252 package outline to maintain mechanical compatibility.
