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Product Detailed Parameters
- Description：MOSFET N-CH 25V 55A TO252
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：25 V
- Current - Continuous Drain (Id) @ 25°C：55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：6mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：50 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2460 pF @ 12.5 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta), 60W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The AOD472 is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to deliver low on-resistance and gate charge. Key electrical parameters include a drain-source voltage of 25V, a continuous drain current of 55A at TC=25°C, and a maximum static drain-source on-resistance of 6mΩ at VGS=10V. The device features a TO-252 package with a junction-to-case thermal resistance of 2.5°C/W.
Feature Summary
- Advanced trench technology design for excellent RDS(ON) performance
- Low gate charge characteristics suitable for PWM applications
- 100% UIS tested for robust avalanche capability
- Built-in body diode with fast reverse recovery
Applications
- PWM motor drive circuits
- DC-DC converter topologies
- General purpose load switching
- Solenoid drive systems
Procurement Notes
Verify the specific datasheet revision and manufacturing date code upon procurement. Confirm that the component meets RoHS compliance standards if required by your assembly process. Ensure the supplier provides traceability documentation consistent with Alpha & Omega Semiconductor quality requirements. Check for any specific handling precautions related to electrostatic discharge during storage and installation.
Selection Notes
Select this component for applications requiring low conduction losses in 25V systems. Consider the thermal management requirements based on the junction-to-ambient resistance when designing PCB layouts. Evaluate the gate charge specifications against driver capabilities to optimize switching speeds. Verify that the pulsed drain current ratings align with the peak load demands of the target circuit.
Part Context
This part belongs to the Alpha & Omega Semiconductor N-Channel MOSFET family designed for power switching applications. It is housed in a TO-252 (D-Pak) surface-mount package. The device is intended for consumer market applications and is not authorized for use as a critical component in life support devices or systems without explicit manufacturer approval.
Replacement Considerations
Direct substitutes must match the 25V rating, 55A current capacity, and TO-252 package. Verify pinout compatibility and thermal resistance values. Cross-reference dynamic parameters such as gate charge and switching times to ensure equivalent performance in the existing circuit design.
