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Product Detailed Parameters
- Description：MOSFET N-CH 30V 85A TO252
- Series：SRFET™
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：85A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：4.4mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：74 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4512 pF @ 15 V
- FET Feature：Schottky Diode (Body)
- Power Dissipation (Max)：2.5W (Ta), 100W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The AOD492 is an N-channel enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench MOSFET technology to achieve low on-resistance and fast switching speeds. The device is housed in a TO-252 surface-mount package, designed for high-efficiency power management applications. Key electrical characteristics include a drain-source voltage rating of 30V and a continuous drain current capacity of 17A at 25°C case temperature. The component supports a junction temperature range from -55°C to 175°C.
Feature Summary
- Advanced trench technology provides excellent RDS(ON) performance and low gate charge for efficient switching.
- Monolithic integration of a Schottky diode with the synchronous MOSFET boosts overall circuit efficiency.
- Asymmetric dual configuration allows for compact implementation as a switch and synchronous rectifier combination.
Applications
- DC-DC converters
- Synchronous rectification circuits
- Power management modules
Procurement Notes
Verify the specific datasheet revision and manufacturer lot codes upon procurement. Confirm RoHS compliance status and packaging type (Tape & Reel or Cut Tape) matches design requirements. Ensure thermal management solutions align with the specified power dissipation limits in the official Alpha & Omega documentation.
Selection Notes
Select this component for designs requiring asymmetric dual N-channel MOSFETs with integrated body diodes. Evaluate the trade-off between the 30V breakdown voltage and the 17A current handling capability against load requirements. Consider the TO-252 package thermal resistance for heat sinking strategies in dense PCB layouts.
Part Context
This part belongs to the Alpha & Omega Semiconductor MOSFET portfolio, specifically utilizing trench technology for power applications. It serves as a discrete solution for synchronous rectification, replacing external diodes to reduce conduction losses. The TO-252 form factor facilitates automated assembly in standard surface-mount production lines.
Replacement Considerations
Cross-reference AO4924 for similar asymmetric dual configurations. Verify pinout compatibility and electrical parameters such as VDS and ID before substitution. Check for updated revisions or alternative packages within the same manufacturer series.
