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The AOD496A is an N-channel MOSFET from Alpha & Omega Semiconductor, utilizing advanced trench technology. It features a drain-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 11 A at ambient temperature, rising to 57 A at case temperature. The device operates with a maximum gate-source voltage (Vgs) of ±20 V and has a junction temperature range of -55°C to 175°C. Key electrical characteristics include a maximum on-resistance (Rds(on)) of 9 mΩ at 10 V gate drive and 20 A drain current, a maximum gate charge (Qg) of 38 nC at 10 V, and a maximum input capacitance (Ciss) of 2220 pF at 12.5 V.
Verify the specific suffix 'A' against the manufacturer's official datasheet to confirm pinout and thermal specifications match your design requirements. Confirm RoHS compliance status via the latest production change notice (PCN). Check for end-of-life notifications as distribution availability may be limited.
Select this component when a 30 V N-channel MOSFET with high current handling in a TO-252 package is required. Ensure the application duty cycle allows for the specified 11 A continuous rating at ambient temperatures or utilize adequate heatsinking for higher currents. Verify that the gate drive voltage meets the 10 V threshold for optimal Rds(on) performance.
The AOD496A belongs to the AOD series of N-channel MOSFETs from Alpha & Omega Semiconductor. These devices are designed for general-purpose power switching applications requiring low conduction losses. The part is housed in a TO-252 (DPAK) surface-mount package, suitable for automated assembly processes.
Direct substitutes must match the 30 V, 11 A/57 A ratings and TO-252 package. Verify equivalent Rds(on) and Qg values to ensure similar switching performance.