AOD508

AOD508

$1.10
  • Description:MOSFET N-CH 30V 22A/70A TO252
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:909a10de2f9b Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N-CH 30V 22A/70A TO252
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:22A (Ta), 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:3mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id:2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:49 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:2010 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):2.5W (Ta), 50W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:TO-252 (DPAK)
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63

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AOD508

Overview

The AOD508 is a 30V N-Channel AlphaMOS power MOSFET from Alpha & Omega Semiconductor Inc. It features a maximum drain-source voltage of 30V and a continuous drain current of 70A at VGS=10V. The device exhibits very low on-resistance, specified as less than 3mW at VGS=10V and less than 4.5mW at VGS=4.5V. It utilizes the latest Trench Power MOSFET technology to achieve high current capability and low gate charge. The component is designed for robust performance in DC/DC converter applications.

Feature Summary

  • Utilizes advanced Trench Power MOSFET technology for enhanced performance
  • Features very low RDS(on) across standard gate drive voltages
  • Includes low gate charge characteristics for efficient switching
  • Provides high current capability suitable for demanding power stages

Applications

  • DC/DC Converters in Computing
  • Isolated DC/DC Converters in Telecom
  • Isolated DC/DC Converters in Industrial systems

Procurement Notes

Verify the specific package variant required, as the datasheet covers both TO252 (DPAK) and TO-251A (IPAK) configurations. Confirm that the selected part meets the intended thermal dissipation requirements based on the application's board design and ambient temperature conditions. Ensure compliance with RoHS and Halogen-Free standards if mandated by the final product specifications.

Selection Notes

Select this component for designs requiring low conduction losses at 30V levels. The low gate charge supports high-frequency operation in switching regulators. Evaluate the thermal management strategy carefully, as the junction-to-ambient resistance varies significantly based on PCB copper area and airflow. The device is suitable for computing and industrial telecom power supplies where efficiency and current density are critical.

Part Context

This component belongs to the AlphaMOS series from Alpha & Omega Semiconductor Inc., focusing on low-voltage, high-current power switching solutions. The AOD508 specifically targets applications needing robust N-channel MOSFETs with optimized on-resistance. It represents the company's trench technology implementation for cost-effective and high-performance power management in compact form factors.

Replacement Considerations

Check pinout compatibility between TO252 and TO-251A packages if substituting within the same family. Verify that alternative devices meet or exceed the 30V breakdown and 70A current ratings. Ensure the replacement maintains similar gate charge and on-resistance values to preserve circuit efficiency and switching speeds.

FAQ

What is the maximum junction temperature for the AOD508?

The maximum junction and storage temperature range is -55 to 175 °C.

Is the AOD508 tested for avalanche ruggedness?

Yes, the datasheet specifies that the device is 100% UIS (Unclamped Inductive Switching) tested.

What is the typical gate threshold voltage range?

The gate threshold voltage ranges from a minimum of 1.2V to a maximum of 2.2V at TJ=25°C.

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$1.10
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