ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 30V 18A/46A TO252
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：18A (Ta), 46A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：33 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1229 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta), 50W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Download product information
Overview
The AOD516 is a 30V N-Channel AlphaMOS power MOSFET in a TO-252 (DPAK) package. It features a continuous drain current of 46A at TC=25°C and a pulsed drain current of 170A. The on-resistance is less than 5mΩ at VGS=10V and less than 10mΩ at VGS=4.5V, with a gate threshold voltage ranging from 1.8V to 2.6V. Total gate charge is 33nC at VGS=10V. The device supports a junction temperature range of -55°C to 175°C and includes 100% UIS and Rg testing.
Feature Summary
- Utilizes latest trench power MOSFET technology for very low on-resistance at 4.5V gate-source voltage.
- Provides high current capability with single-pulse ratings exceeding standard continuous limits.
- Ensures reliability through 100% unclamped inductive switching and gate resistance testing.
Applications
- DC/DC converters in computing
- Isolated DC/DC converters in telecom
- Isolated DC/DC converters in industrial applications
Procurement Notes
Verify the specific package variant required, as AOI516 and AOY516 share electrical characteristics but use TO-251B IPAK packaging instead of the standard DPAK. Confirm RoHS and halogen-free compliance status if environmental regulations apply to the final assembly. Ensure thermal management design accounts for the specified junction-to-case resistance values during operation.
Selection Notes
Select this component for applications requiring robust performance in low-voltage environments. The low gate threshold voltage facilitates efficient drive from standard logic levels. Consider the thermal derating curves when designing PCB layouts to ensure the junction temperature remains within safe operating limits under varying load conditions.
Part Context
This part belongs to the AlphaMOS family of N-channel enhancement mode field effect transistors. It is designed for general-purpose power switching applications where low conduction losses are critical. The product line emphasizes efficiency and reliability through advanced trench technology and comprehensive factory testing protocols.
Replacement Considerations
AOI516 and AOY516 are electrically equivalent alternatives using the TO-251B IPAK package. Verify pinout compatibility and physical footprint differences before substitution.
FAQ
What is the maximum avalanche energy rating?
The device has an avalanche energy rating of 42 mJ when tested with an inductance of 0.1 mH.
How does the on-resistance vary with temperature?
The on-resistance increases as the junction temperature rises, as illustrated in the normalized on-resistance versus junction temperature characteristic curve.
