AOD607_001

Description：MOSFET N/P-CH 30V 12A TO252-4L
Series：-

SKU:750e9ea8eee1 Category: FET, MOSFET Arrays Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 30V 12A TO252-4L
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel Complementary
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：12A (Tc)
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：-
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-252-5, DPAK (4 Leads + Tab), TO-252AD
Supplier Device Package：TO-252-4L
Grade：-
Qualification：-

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AOD607_001

Overview

The AOD607 is a complementary enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductor. It integrates an n-channel and a p-channel MOSFET in a single TO-252-4L (D-Pak) package with the drain connected to the tab. The n-channel device offers a drain-source voltage of 30V, continuous drain current of 12A at VGS=10V, and on-resistance below 25mΩ. The p-channel counterpart provides -30V breakdown, -12A current capability, and on-resistance under 37mΩ. Both transistors are rated for a junction temperature up to 175°C and feature low gate charge characteristics.

Feature Summary

Complementary n-channel and p-channel MOSFETs integrated in a single package
Advanced trench technology for low on-resistance and fast switching
Drain connected to the exposed thermal tab for efficient heat dissipation
100% Unclamped Inductive Switching (UIS) tested

Applications

H-bridge circuits
Inverters
DC motor drivers

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm datasheet revision status matches design requirements. Ensure PCB layout accommodates the TO-252-4L footprint and thermal pad connection. Validate that application conditions remain within absolute maximum ratings specified in the official documentation.

Selection Notes

Select this component for applications requiring matched complementary pairs in power switching roles. The shared thermal tab simplifies heatsinking compared to discrete dual packages. Verify gate drive voltage levels align with the specified RDS(ON) thresholds. Consider the package's current carrying capacity relative to bond wire limitations.

Part Context

This part belongs to Alpha & Omega Semiconductor's portfolio of discrete power devices. It utilizes advanced trench MOSFET process technology to achieve high performance in a compact surface-mount form factor. The complementary nature allows for simplified driver design in bridge configurations.