AOD661

$0.26

Description：MOSFET 2N-CH 30V 12A TO252-4L
Series：-

SKU:8f08267e5d8b Category: FET, MOSFET Arrays Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 12A TO252-4L
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：12A (Tc)
Rds On (Max) @ Id, Vgs：16.5mOhm @ 12A, 10V, 22.5mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：10nC @ 4.5V, 15nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：760pF @ 15V
Power - Max：15.6W, 31W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-252-5, DPAK (4 Leads + Tab), TO-252AD
Supplier Device Package：TO-252-4L
Grade：-
Qualification：-

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AOD661

Overview

The AOD661 is a dual complementary MOSFET in a TO-252-4L package, integrating an N-channel and P-channel device. The N-channel transistor supports a drain-source voltage of 30V with a continuous drain current of 12A at VGS=10V; its on-resistance is less than 16.5mΩ at VGS=10V and 21mΩ at VGS=4.5V. The P-channel counterpart provides a -30V breakdown and -12A continuous current, featuring an on-resistance under 22.5mΩ at VGS=-10V and 36mΩ at VGS=-4.5V. Both transistors utilize trench power MOSFET technology to achieve low gate charge and excellent thermal performance.

Feature Summary

Complementary N-channel and P-channel configuration for DC-FAN applications
Trench power MOSFET technology providing low on-resistance and low gate charge
Excellent thermal performance with verified single-pulse ratings

Applications

DC-FAN power inversion circuits

Procurement Notes

Verify the specific ordering suffix against official Alpha & Omega Semiconductor documentation before procurement. Confirm that the component meets RoHS and Halogen-Free compliance standards required by your manufacturing process. Ensure the selected package variant matches the intended PCB footprint and tape-and-reel specifications.

Selection Notes

Evaluate the junction-to-case thermal resistance values when designing heatsinking solutions. Consider the maximum forward biased safe operating area curves for transient load conditions. Verify that the gate drive voltage levels align with the specified thresholds for optimal on-resistance performance across the operating temperature range.

Part Context

This component belongs to Alpha & Omega Semiconductor's portfolio of discrete power devices designed for high-volume consumer and industrial electronics. It utilizes advanced packaging techniques to deliver high power density within a compact surface-mount form factor suitable for automated assembly processes.