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The AOD66919 is a 100V N-Channel MOSFET utilizing AlphaSGT™ trench technology in a TO-252 package. It features a maximum drain-source voltage of 100V and a continuous drain current of 70A at TC=25°C. The device offers low on-resistance, specified as less than 6.5mΩ at VGS=10V and less than 8.5mΩ at VGS=4.5V. Key electrical parameters include a gate threshold voltage range of 1.5V to 2.6V, a total gate charge of 66nC at 10V, and a maximum junction-to-case thermal resistance of 0.8°C/W.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and compliance status. Confirm that the component meets RoHS 2.0 and halogen-free requirements if mandated by the design specifications. Cross-reference the datasheet revision date to ensure alignment with the latest electrical characteristics and thermal ratings provided by Alpha & Omega Semiconductor Inc.
Select this component for designs requiring robust 100V blocking capability with high current handling up to 70A. The low on-resistance values support efficient power management in synchronous rectification topologies. Ensure the application environment allows for adequate thermal dissipation, considering the junction-to-ambient resistance metrics provided in the datasheet for accurate power derating calculations.
This part belongs to the AlphaSGT™ series from Alpha & Omega Semiconductor Inc., designed for advanced power management solutions. The TO-252 (DPAK) form factor provides a balance between thermal performance and surface-mount convenience. The product line targets high-volume applications including consumer electronics, industrial controls, and power supply units where efficiency and reliability are critical.
No public substitute part numbers are documented in the source material.