AOD66923

$1.40

Description：MOSFET N-CH 100V 16.5A/58A TO252
Series：AlphaSGT™
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:e964ebae8b51 Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V 16.5A/58A TO252
Series：AlphaSGT™
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：16.5A (Ta), 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：11mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：35 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1725 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：6.2W (Ta), 73W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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AOD66923

Overview

The AOD66923 is a 100V N-Channel MOSFET utilizing AlphaSGT™ trench technology in a TO-252 (DPAK) package. It features a maximum drain-source voltage of 100V and continuous drain current ratings of 16.5A at ambient temperature and 58A at case temperature. The device offers low on-resistance, specified as less than 11mΩ at VGS=10V and less than 15mΩ at VGS=4.5V. Key electrical parameters include a gate threshold voltage range of 1.6V to 2.6V, a maximum gate charge of 35nC at 10V, and an input capacitance of 1725pF. Thermal characteristics define a junction-to-case resistance of 1.7°C/W and a junction-to-ambient resistance of 50°C/W.

Feature Summary

AlphaSGT™ Trench Power Technology for optimized performance
Logic Level Driving capability with low RDS(ON)
Excellent Figure of Merit (QG x RDS(ON))
Spike Optimized Process design

Applications

High Frequency Switching
Synchronous Rectification

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging configuration. Confirm that the component meets RoHS and Halogen-Free compliance requirements relevant to your manufacturing standards. Cross-reference the datasheet revision date to ensure alignment with any recent product design or reliability updates issued by Alpha & Omega Semiconductor Inc.

Selection Notes

Select this component for applications requiring robust high-frequency switching and synchronous rectification. The logic level driving feature supports efficient control from standard logic interfaces. Evaluate thermal management strategies based on the specified junction-to-case and junction-to-ambient resistances to maintain operation within the -55°C to 150°C junction temperature range under expected load conditions.

Part Context

This part belongs to the AlphaSGT™ series of power MOSFETs manufactured by Alpha & Omega Semiconductor Inc. The series emphasizes low on-resistance and fast switching speeds through advanced trench gate technology. The TO-252 package provides a balance of power handling capabilities and surface-mount convenience for various electronic circuit designs.