Single FETs, MOSFETs AOD8N25 product image

AOD8N25

$1.01
  • Description:MOSFET N CH 250V 8A TO252
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:0fa9a103f565 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

AOD8N25 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N CH 250V 8A TO252. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AOD8N25

  • Description:MOSFET N CH 250V 8A TO252
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):250 V
  • Current - Continuous Drain (Id) @ 25°C:8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:560mOhm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id:4.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:7.2 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:306 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):78W (Tc)
  • Operating Temperature:-50°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:TO-252 (DPAK)
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for AOD8N25

AOD8N25

Single FETs, MOSFETs Overview

The AOD8N25 is an N-Channel MOSFET with a 250V drain-source voltage rating and an 8A continuous drain current capability at VGS=10V. It features a maximum on-resistance of less than 0.56 ohms under the same gate drive conditions. The device supports a peak pulsed drain current of 16A and has been tested for 100% unclamped inductive switching (UIS) robustness. Thermal characteristics include a junction-to-case resistance of 1.6°C/W and a junction-to-ambient resistance of 55°C/W, supporting operation within a -50 to 150°C temperature range.

Single FETs, MOSFETs Feature Summary

  • Advanced high-voltage MOSFET process designed for low on-resistance and fast switching performance.
  • Guaranteed avalanche capability validated through 100% UIS testing for enhanced circuit robustness.
  • Optimized gate charge and capacitance parameters to facilitate efficient integration into offline power supply designs.

Single FETs, MOSFETs Applications

  • Boost converters
  • Synchronous rectifiers
  • Consumer power supplies
  • Telecom power supplies
  • Industrial power supplies
  • LED backlighting

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant required, as the datasheet covers both TO252 (DPAK) and TO251A (IPAK) configurations. Confirm that the application design accounts for the thermal resistance values provided for the selected mounting method. Ensure all electrical limits, particularly regarding avalanche energy and pulsed currents, are respected during system validation to maintain component reliability.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring a 250V breakdown voltage and moderate current handling up to 8A. The low on-resistance makes it suitable for improving efficiency in AC-DC conversion stages. Consider the thermal management requirements based on the specified junction-to-ambient and junction-to-case resistances when designing the PCB layout or heatsinking strategy.

Single FETs, MOSFETs Part Context

This part belongs to Alpha & Omega Semiconductor's lineup of high-voltage N-Channel MOSFETs. It is engineered to deliver high performance and robustness in popular AC-DC applications. The device is fabricated using an advanced process technology aimed at minimizing conduction losses while maintaining reliable switching characteristics for offline power supply designs.

Single FETs, MOSFETs Replacement Considerations

The AOI8N25 is listed alongside the AOD8N25 in the documentation, indicating a potential pin-compatible or functionally equivalent alternative within the same product family. Verify package compatibility and exact parameter matching before substitution.

Single FETs, MOSFETs FAQ

Is the AOD8N25 rated for repetitive avalanche operation?

Yes, the datasheet confirms that the device has been 100% UIS tested and offers guaranteed avalanche capability.

What is the maximum body-diode reverse recovery time?

The typical body-diode reverse recovery time (trr) is 77 ns under test conditions of IF=1.5A and dI/dt=100A/ms.

AOD8N25AOD8N25
$1.01
Buy Now