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AOD8N25 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N CH 250V 8A TO252. Review the specifications below when checking this part for your BOM.
The AOD8N25 is an N-Channel MOSFET with a 250V drain-source voltage rating and an 8A continuous drain current capability at VGS=10V. It features a maximum on-resistance of less than 0.56 ohms under the same gate drive conditions. The device supports a peak pulsed drain current of 16A and has been tested for 100% unclamped inductive switching (UIS) robustness. Thermal characteristics include a junction-to-case resistance of 1.6°C/W and a junction-to-ambient resistance of 55°C/W, supporting operation within a -50 to 150°C temperature range.
Verify the specific package variant required, as the datasheet covers both TO252 (DPAK) and TO251A (IPAK) configurations. Confirm that the application design accounts for the thermal resistance values provided for the selected mounting method. Ensure all electrical limits, particularly regarding avalanche energy and pulsed currents, are respected during system validation to maintain component reliability.
Select this component for applications requiring a 250V breakdown voltage and moderate current handling up to 8A. The low on-resistance makes it suitable for improving efficiency in AC-DC conversion stages. Consider the thermal management requirements based on the specified junction-to-ambient and junction-to-case resistances when designing the PCB layout or heatsinking strategy.
This part belongs to Alpha & Omega Semiconductor's lineup of high-voltage N-Channel MOSFETs. It is engineered to deliver high performance and robustness in popular AC-DC applications. The device is fabricated using an advanced process technology aimed at minimizing conduction losses while maintaining reliable switching characteristics for offline power supply designs.
The AOI8N25 is listed alongside the AOD8N25 in the documentation, indicating a potential pin-compatible or functionally equivalent alternative within the same product family. Verify package compatibility and exact parameter matching before substitution.
Yes, the datasheet confirms that the device has been 100% UIS tested and offers guaranteed avalanche capability.
The typical body-diode reverse recovery time (trr) is 77 ns under test conditions of IF=1.5A and dI/dt=100A/ms.
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