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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 22A 8DFN
- Series：AlphaMOS
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Asymmetrical
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：22A (Tc), 85A (Tc)
- Rds On (Max) @ Id, Vgs：4.3mOhm @ 20A, 10V, 0.83mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA, 1.9V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：15nC @ 4.5V, 65nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：1075pF @ 15V, 5560pF @ 15V
- Power - Max：24W, 75W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-VDFN Exposed Pad
- Supplier Device Package：8-DFN (5x6)
- Grade：-
- Qualification：-
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Overview
The AOE6930 is a dual asymmetric N-Channel XSPairFET MOSFET featuring Bottom Source Technology. It integrates two distinct channels within an 8-DFN (5x6) package. Q1 provides a drain-source voltage of 30V, continuous current of 22A at TC=25°C, and on-resistance below 4.3mΩ at VGS=10V. Q2 offers higher current capability with 85A continuous current at TC=25°C and on-resistance below 0.83mΩ at VGS=10V. The device supports junction temperatures up to 150°C and includes comprehensive thermal characteristics for power dissipation management.
Feature Summary
- Dual asymmetric configuration with integrated bottom source technology
- High current handling capability optimized for non-isolated DC/DC converters
- Low gate charge and on-resistance for efficient switching performance
Applications
- Non-isolated DC/DC converters in computing and servers
- Point-of-load (POL) applications
- Telecom and industrial DC/DC conversion systems
Procurement Notes
Verify the specific ordering suffix against Alpha & Omega Semiconductor documentation to confirm package type and reel quantity. Ensure compatibility with standard surface mount assembly processes. Confirm RoHS 2.0 compliance status through official manufacturer declarations prior to integration into production lines.
Selection Notes
Evaluate thermal resistance requirements based on the specific application's heatsinking strategy. Compare Q1 and Q2 electrical parameters against load current demands. Verify that gate drive voltages align with the specified thresholds for optimal on-resistance performance. Consider the asymmetric nature of the device when designing circuit topologies.
Part Context
This component belongs to the AlphaMOS series from Alpha & Omega Semiconductor Inc. It utilizes the DFN 5X6E package format designed for high-density surface mount applications. The product line emphasizes low on-resistance and high current capabilities for modern power management solutions.
Replacement Considerations
Consult official Alpha & Omega Semiconductor cross-reference lists for verified substitutes. Ensure any replacement maintains equivalent voltage ratings, current capabilities, and package dimensions. Verify thermal performance metrics match the original design constraints.
